KEXIN BAP65-03

Diodes
SMD Type
Silicon PIN diode
BAP65-03
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
High voltage, current controlled
+0.1
2.6-0.1
1.0max
RF resistor for RF switches
Low diode capacitance
0.375
0.475
+0.05
0.1-0.02
Low diode forward resistance (low loss)
Very low series inductance.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
30
V
continuous forward current
IF
100
mA
P tot
500
mW
total power dissipation
TS
90
storage temperature
T stg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
R th j-s
120
K/W
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1
Diodes
SMD Type
BAP65-03
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
forward voltage
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
IR
VR = 20 V
20
nA
diode capacitance
Cd
diode forward resistance
rD
insertion loss
|s21|
0.9
0.5
0.8
1
IF = 5 mA; f = 100 MHz; note 1
0.65
0.95
IF = 10 mA; f = 100 MHz; note 1
0.56
0.9
IF = 100 mA; f = 100 MHz
0.35
|s21|2
insertion loss
0.55
VR = 3 V; f = 1 MHz
0.375
|s21|2
insertion loss
VR = 1 V; f = 1 MHz
VR = 20V; f = 1 MHz
|s21|2
insertion loss
0.65
IF = 1 mA; f = 100 MHz; note 1
|s21|2
isolation
VR = 0; f = 1 MHz
2
VR = 0; f = 900 MHz
10.2
VR = 0; f = 1800 MHz
5.8
VR = 0; f = 2450 MHz
4.1
VR = 1; f = 900 MHz
0.1
VR = 1; f = 1800 MHz
0.14
VR = 1; f = 2450 MHz
0.18
VR = 5; f = 900 MHz
0.06
VR = 5; f = 1800 MHz
0.1
VR = 5; f = 2450 MHz
0.14
VR = 10; f = 900 MHz
0.06
VR = 10; f = 1800 MHz
0.1
VR = 10; f = 2450 MHz
0.13
VR = 100; f = 900 MHz
0.05
VR = 100; f = 1800 MHz
0.1
VR = 100; f = 2450 MHz
0.14
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
L
RL = 100
series inductance
LS
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
2
D3
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pF
dB
dB
dB
dB
dB
0.17
ìs
1.5
nH
;measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
Note
Unit