TYSEMI BAP64-05

Product specification
BAP64-05
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
Low diode capacitance
1
0.55
RF resistor for RF attenuators and switches
+0.1
1.3-0.1
+0.1
2.4-0.1
High voltage, current controlled
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low diode forward resistance
+0.05
0.1-0.01
+0.1
0.97-0.1
Low series inductance
0-0.1
+0.1
0.38-0.1
For applications up to 3 GHz.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
Min
Max
Unit
VR
175
V
IF
100
mA
Ptot
250
mW
storage temperature
Tstg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
Rth j-s
220
1.Base
2.Emitter
3.collector
K/W
Electrical Characteristics Ta = 25
Symbol
Conditions
forward voltage
Parameter
VF
IF = 50 mA
reverse leakage current
VR
Min
Typ
Max
Unit
0.95
1.1
V
VR = 175 V
VR = 20 V
diode capacitance
Cd
diode forward resistance
rD
VR = 0; f = 1 MHz
0.52
1
A
VR = 1 V; f = 1 MHz
0.37
0.5
0.23
0.35
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
10
20
IF = 10 mA; f = 100 MHz; note 1
2
3.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
L
IR = 6mA; RL = 100
series inductance
A
VR = 20 V; f = 1 MHz
when switched from IF = 10 mA to
charge carrier life time
10
1.55
S
1.4
nH
,measured at IR = 3 mA
LS
pF
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
5Kp
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