Diodes SMD Type Low-leakage diode BAS116 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Plastic SMD package 0.4 3 Features 1 Switching time: typ. 0.8 ìs 0.55 Low leakage current: typ. 3 pA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Continuous reverse voltage:max. 75 V +0.05 0.1-0.01 +0.1 0.97-0.1 Repetitive peak reverse voltage:max. 85 V 0-0.1 +0.1 0.38-0.1 Repetitive peak forward current:max. 500 mA. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Repetitive peak reverse voltage Symbol Conditions Min VRRM Max Unit 85 V Continuous reverse voltage VR 75 V Continuous forward current IF 215 mA 500 mA Repetitive peak forward current IFRM square wave; Tj = 25 Non-repetitive peak forward current IFSM prior to surge s 4 t = 1 ms 1 t=1s 0.5 t=1 A Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj 150 thermal resistance from junction to tie-point Rth j-t p 330 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Ta mb = 25 250 ; note 1 -65 mW +150 www.kexin.com.cn 1 Diodes SMD Type BAS116 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ IF = 1 mA Forward voltage VF Reverse current trr Marking 2 JVp www.kexin.com.cn 1.1 IF = 150 mA 1.25 5 3 80 f = 1 MHz; V R = 0 2 when switched from IF = 10 mA to IR = 10 mA; RL = 100 Marking 1 IF = 50 mA 0.003 Cd Reverse recovery time IF = 10 mA V R = 75 V ;measured at IR = 1 mA; Unit 0.9 V R = 75 V; Tj = 150 IR Diode capacitance Max 0.8 V nA pF 3 s