TYSEMI BC817W

Transistors
IC
SMD Type
Product specification
BC817W
Features
High current.
Low voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage (IC = 10 mA)
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
Peak base current
IBM
200
mA
mW
Total power dissipation
Ptot
200
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Ramb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
http://www.twtysemi.com
[email protected]
K/W
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
BC817W
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Collector cutoff current
Emitter cutoff current
Testconditons
Min
IE = 0 A; VCB = 20 V
ICBO
IE = 0 A; VCB = 20 V;Tj = 150
IEBO
IC = 0 A; VEB = 5 V
BC817W
BC817-16W
DC current gain
Typ
Max
100
nA
5
ìA
100
nA
100
600
100
250
BC817-25W
160
400
BC817-40W
250
600
Collector-emitter saturation voltage
hFE
IC = 100 mA; VCE = 1 V *
Unit
VCE(sat)
IC = 500 mA; IB = 50 mA
700
mV
Base-emitter voltage
VBE
IC = 500 mA; VCE = 1 V
1.2
V
Collector capacitance
CC
IE = ie = 0 A; VCB = 10 V;f = 1 MHz
Transition frequency
fT
IC = 10 mA; VCE = 5 V;f = 100 MHz
* Pulse test: t
300ìs, D
3
100
pF
MHz
2%.
hFE Classification
TYPE
BC817W
BC817-16W
BC817-25W
BC817-40W
Marking
6D
6A
6B
6C
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2