SMD Type Product specification KC846S(BC846S) SOT-363 1.3 Unit: mm +0.1 -0.1 +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 0.65 0.36 For AF input stage and driver applications +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 Low collector-emitter saturation voltage. 0.1max High current gain. 1 E1 4 E2 2 B1 5 B2 3 C2 6 C1 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 65 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 100 mA Peak collector current ICM 200 mA mW power dissipation PD 250 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification KC846S(BC846S) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 10 A, IE = 0 80 V Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 65 V Emitter-base breakdown voltage VEBO IE = 10 6 Collector cutoff current ICBO DC current gain * hFE Collector-emitter saturation voltage* VCE(sat) Base-emitter saturation voltage* VBE(sat) Base-emitter voltage* VBE(ON) A, IC = 0 V VCB = 30 V, IE = 0 15 nA VCB = 30 V, IE = 0 , TA = 150 5 A IC = 10 250 A, VCE = 5 V IC = 2 mA, VCE = 5 V 200 290 450 IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 200 650 IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 IC = 2 mA, VCE = 5 V 580 660 IC = 10 mA, VCE = 5 V mV mV 700 770 mV Collector-base capacitance Ccb VCB = 10 V, f = 1 MHz 2 pF Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 10 pF Noise figure F IC = 200 A, VCE = 5 V, RS = 2 k kHz, f = 200 Hz Transition frequency fT IC = 20 mA, VCE = 5 V, f = 100 MHz * Pulse test: t < 300 ,f = 1 10 250 dB MHz s; D < 2% Marking Marking 1D http://www.twtysemi.com [email protected] 4008-318-123 2 of 2