TYSEMI BST39

Transistors
SMD Type
Product specification
BST39; BST40
Features
Low current (max. 50 mA)
High voltage (max. 300 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
collector-base voltage
BST39
(open emitte)
BST40
collector-emitter voltage
BST39
(open-base )
BST40
VCBO
Rating
Unit
400
V
300
V
350
V
250
V
VEBO
5
V
collector current (DC)
IC
100
mA
peak collector current
ICM
200
mA
peak base current
IBM
100
mA
W
VCEO
emitter-base voltage (open collector)
Ptot
1.3
storage temperature
Tstg
-65 to150
junction temperature
Tj
150
operating ambient temperature
Tamb
-65 to150
thermal resistance from junction to ambient *
Rth j-a
96
K/W
thermal resistance from junction to soldering point
Rth j-s
16
K/W
total power dissipation Tamb
25
*
* Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for
collector 6 cm2.
http://www.twtysemi.com
[email protected]
4008-318-123
1of 2
Transistors
SMD Type
Product specification
BST39; BST40
Electrical Characteristics Ta = 25
unless otherwise specified.
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
collector cut-off current
ICBO
IE = 0; VCB = 300 V
20
nA
emitter cut-off current
IEBO
IC = 0; VEB = 5 V
100
nA
DC current gain
hFE
IC = 20 mA; VCE = 10 V
40
IC = 50 mA; IB = 4 mA
500
mV
2
pF
collector-emitter saturation voltage
VCEsat
collector capacitance
Cc
IE = ie = 0; VCB = 10 V; f = 1 MHz
transition frequency
fT
IC = 10 mA; VCE = 10 V; f = 100 MHz
70
MHz
Marking
Type Number
BST39
BST40
Marking
AT1
AT2
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2