TYSEMI 2PD602A

Product specification
2PD602A
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
High current (max. 500 mA)
2
Low voltage (max. 50 V).
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
Peak base current
IBM
200
mA
Total power dissipation Tamb 25 ; *
Ptot
250
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
http://www.twtysemi.com
[email protected]
4008-318-123
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Product specification
2PD602A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
Testconditons
Min
Max
Unit
10
nA
IE = 0; VCB = 60 V; Tj = 150
5
ìA
IC = 0; VEB = 4 V
10
nA
IE = 0; VCB = 60 V
2PD602AQ
2PD602AR
hFE
IC = 150 mA; VCE = 10 V; *
2PD602AS
DC current gain
Collector-emitter saturation voltage
Collector capacitance
120
240
170
340
IC = 500 mA; VCE = 10 V; *
VCEsat
IC = 300 mA; IB = 30 mA; *
600
mV
IE = ie = 0; VCB = 10 V; f = 1 MHz
15
pF
2PD602AQ
2PD602AR
170
hFE
Cc
Transition frequency
85
140
fT
IC = 50 mA; VCE = 10 V; f = 100 MHz *
2PD602AS
160
MHz
180
* Pulse test: tp 300 ìs; ä 0.02.
Marking
Type Number
2PD602AQ
2PD602AR
2PD602AS
hFE
XQ
XR
XS
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2