Product specification DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = 25°C 50mΩ @ VGS = -10V -4.0A 72mΩ @ VGS = -4.5V -3.3A V(BR)DSS • • • • • • • -30V Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • • Load Switch DC-DC Converters Power management functions Case: SC59 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Drain SC59 D Gate Source Top View S G Pin Configuration Internal Schematic Ordering Information (Note 3) Part Number DMG3407SSN-7 Notes: Case SC59 Packaging 3000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free Marking Information G32 Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 http://www.twtysemi.com Mar 3 YM ADVANCE INFORMATION Features and Benefits G32 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2012 Z Apr 4 May 5 [email protected] 2013 A Jun 6 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D 1 of 2 Product specification DMG3407SSN Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 5) VGS = -4.5V Steady State t<10s ID Value -30 ±20 -4.0 -3.2 ID -4.6 -3.6 A ID -3.3 -2.6 A A -3.9 -3.1 -30 -2.0 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5) Units V V IDM IS A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol TA = 25°C TA = 70°C Steady state t<10s TA = 25°C TA = 70°C Steady state t<10s Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.1 0.7 166 118 1.8 1.1 98 71 18 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.5 39 56 8.2 -0.75 -2.1 50 72 -1.1 V Static Drain-Source On-Resistance -1.0 - VDS = VGS, ID = -250μA VGS = -10V, ID = -4.1A VGS = -4.5V, ID = -3.0A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 466 80 47 2 10.6 5.2 1.3 1.1 6.8 5.5 582 114 76 5 13.3 6.5 1.7 1.9 6.0 12.9 35.4 30.7 8.5 7.0 700 148 105 8 16 8.5 2 2.7 10.2 8.5 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF Ω nC Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -10V, VDS = -15V, ID = -4A VGS = -4.5V, VDS = -15V,ID = -4A ns VGS = -10V, VDS = -15V, RL = 3.6Ω, RG = 3Ω ns nC IF = 4A, di/dt = 100A/μs 2. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s RθJA 3. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation PD is based on t<10s RθJA 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2