Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications • • DC-DC Converters Power management functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ۛ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain SOT23 D Gate G ESD PROTECTED TO 3kV Top View S Top View Internal Schematic Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMG3415U-7 DMG3415UQ-7 DMG3415U-13 Notes: Qualification Commercial Automotive Commercial Case SOT23 SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 34P YW Marking Information 34P = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ 26 a ~ y = Weeks 27 ~ 51 z = Weeks 52 and 53) DMG3415U-7 http://www.twtysemi.com [email protected] 1 of 2 Product specification DMG3415U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Units V V IDM Value -20 ±8 -4.0 -3.5 -30 Symbol PD RθJA RθJC TJ, TSTG Value 0.9 139 32 -55 to +150 Units W °C/W °C/W °C TA = +25°C TA = +70°C Steady State ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to case (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±10 µA VGS(th) Static Drain-Source On-Resistance RDS (ON) -0.3 ⎯ ⎯ ⎯ Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| −0.55 31 40 51 3 -1.0 42.5 53 71 ⎯ 294 104 25 250 ⎯ ⎯ ⎯ 9.1 1.5 1.7 71 117 795 393 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: Ciss Coss Crss Rg ⎯ ⎯ ⎯ Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ V µA V mΩ S pF pF pF Ω nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8.0V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -4A VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V ID = -4A VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω, ID = -1A 3. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 4. Short duration pulse test used to minimize self-heating effect. . http://www.twtysemi.com [email protected] 2 of 2