Product specification DMG3420U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 20V • Low On-Resistance RDS(ON) max ID max TA = +25°C • Low Input Capacitance • Fast Switching Speed 21mΩ @ VGS = 10V 6.5A • Low Input/Output Leakage 25mΩ @ VGS = 4.5V 5.2A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching • performance, making it ideal for high efficiency power management • applications. Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • General Purpose Interfacing Switch • Power Management Functions • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Terminals Connections: See Diagram Below • Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Ordering Information (Note 4) Part Number DMG3420U-7 DMG3420UQ-7 Notes: Source Equivalent Circuit TOP VIEW TOP VIEW Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information G31 Date Code Key Year Code Month Code 2009 W Jan 1 http://www.twtysemi.com 2010 X Feb 2 Mar 3 YM NEW PRODUCT V(BR)DSS Features G31 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) 2011 Y Apr 4 May 5 [email protected] 2012 Z Jun 6 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D 1 of 2 Product specification DMG3420U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State NEW PRODUCT Continuous Drain Current (Note 5) Units V V IDM Value 20 ±12 5.47 3.43 20 Symbol PD RθJA TJ, TSTG Value 0.74 167 -55 to +150 Unit W °C/W °C TA = 25°C TA = 85°C ID Pulsed Drain Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1.0 ±100 V µA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS(ON) — |Yfs| VSD — — 1.2 29 35 48 91 — 1.0 V Static Drain-Source On-Resistance 0.95 21 25 34 65 9 0.75 VDS = VGS, ID = 250μA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 2A VDS = 5V, ID = 3.8A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — 434.7 69.1 61.2 1.53 5.4 0.9 1.5 6.5 8.3 21.6 5.3 — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6A VDD = 10V, VGS = 5V, RL = 1.7Ω, RG = 6Ω 3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2