Product specification DMN2112SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) Case: SC59 Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • • • Drain SC59 D Gate ESD Protected Gate Protection Diode TOP VIEW TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT Maximum Ratings S G Source @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Thermal Characteristics Symbol VDSS VGSS Continuous Continuous Pulsed ID Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Units V V Value 500 250 -55 to +150 Units mW °C /W °C A @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Value 20 ±8 1.2 4.0 Symbol Pd RθJA Tj, TSTG @TA = 25°C unless otherwise specified @ Tj = 25°C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 ± 10 V µA µA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = ± 8V, VDS = 0V VGS(th) 0.5 ⎯ 1.2 V Ω VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 2.5V, ID = 0.5A VGS = 1.5V, ID = 0.1A VDS = 10V, ID =0.5A VGS = 0V, IS = 1A Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 0.10 0.14 0.25 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time IYfsI VSD ⎯ ⎯ 4.2 0.8 ⎯ 1.1 S V Ciss Coss Crss ⎯ ⎯ ⎯ 220 120 45 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz tD(ON) tD(OFF) tr tf ⎯ ⎯ ⎯ ⎯ 10 75 15 65 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = 5V, ID = 0.5A, VGS = 10V, RGEN = 50Ω Notes: 1. Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 1