Product specification DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • Mechanical Data • • Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) Case: SC59 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.014 grams (approximate) • • • • Drain SC-59 D Gate TOP VIEW ESD protected S G Gate Protection Diode Source TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Unit V V ID Value 20 ±12 1.2 4.0 Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Symbol Pd RθJA Value 500 250 Unit mW °C /W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Drain-Source Voltage Gate-Source Voltage Drain Current Thermal Characteristics Electrical Characteristics Symbol VDSS VGSS Continuous Continuous Pulsed A @TA = 25°C unless otherwise specified @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 1) Gate Threshold Voltage @ Tj = 25°C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 24V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) ⎯ ⎯ ⎯ 3.3 0.8 1.40 0.100 0.160 V ⎯ 1.1 S V VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 2.5V, ID = 0.5A VDS = 10V, ID = 0.5A VGS = 0V, IS = 1.0A Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time |Yfs| VSD 0.7 ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ 180 120 45 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) tr tf ⎯ ⎯ ⎯ ⎯ 10 50 15 45 ⎯ ⎯ ⎯ ⎯ ns ns ns ns VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50Ω Notes: Ω 1. Pulse width ≤300μS, duty cycle ≤2%. 2. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 1