SMD Type Product specification DTA114TE Features PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.) Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors (See Equivalent Circuit). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Power Dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = -50 A -50 Collector-Emitter Breakdown Voltage BVCEO IC = -1mA -50 V Emitter-Base Breakdown Voltage BVEBO IE = -50 A -5 V ICBO VCB = -50V IEBO VEB = -4V Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio V -0.5 -0.5 VCE(sat) IC = -10mA , IB = -1mA hFE Input Resistance R1 Transistion Frequency fT * A -0.3 VCE = -5V , IC = -1mA 100 7 VCE = -10V , IE = 5mA , f = 100MHz 250 600 10 13 250 A V k MHz * Characteristics of built-in transistor Marking Marking 94 http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification DTA114TE Equivalent Circuit Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2of 2