TYSEMI 2SC4132

Transistors
SMD Type
Product specification
2SC4132
Features
High breakdown voltage
Low collector output capacitance
High transition frequency Ft=80MHz)
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage
VCBO
120
V
collector-emitter voltage
VCEO
120
V
emitter-base voltage
VEBO
5
V
IC
2
A
ICP
3
A *1
0.5
W *2
2
W
collector current
CollectorPower Dissipation
PC
Junotion Temperature
TJ
150
storage Temperature
Tstg
-55 to 150
*1 Single pulse pw=10ms
*2 When mounted on a 40X40X0.7 mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
120
V
collector-emitter breakdown voltage
BVCEO
IC=1mA
120
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
5
V
Collector cutoff current
Emitter out current
Emitter-emitter saturation voltage
ICBO
VCB=100V
IEBO
VEB=4V
VCE(sat)
DC current transfer ratio
IC/IB=1A/0.1A
VCE/IC=5V/0.1A
hFE
Transition frequency
fT
Output capacitance
Cob
82
1
ìA
1
ìA
0.4
V
390
VCE=5V.IE=-0.1A,f=30MHz
80
MHz
VCB=10V,IE=0A,f=1MHz
20
pF
hFE Classification
TYPE
CBP
CBQ
CBR
Rank
P
Q
R
Marking
82 to 180
120 to 270
180 to390
http://www.twtysemi.com
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4008-318-123
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