CJD2955 PNP CJD3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage SYMBOL UNITS VCBO VCEO 70 60 V VEBO IC 5.0 V 10 A IB PD 6.0 A 20 W PD TJ, Tstg 1.75 W -65 to +150 °C Thermal Resistance ΘJC 6.25 °C/W Thermal Resistance ΘJA 71.4 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature V MAX UNITS ICEO VCE=30V 50 µA ICEV VCE=70V, VBE(off)=1.5V VCE=70V, VBE(off)=1.5V, TC=150°C VCB=70V 20 µA 2.0 mA ICEV ICBO ICBO IEBO VCB=70V, TC=150°C VEB=5.0V BVCEO IC=30mA VCE(SAT) VCE(SAT) IC=4.0A, IB=400mA IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE hFE VCE=4.0V, IC=4.0A VCE=4.0V, IC=10A 5.0 fT VCE=10V, IC=500mA, f=1.0MHz 2.0 20 µA 2.0 mA 500 µA 1.1 V 8.0 V 1.8 V 60 20 V 100 MHz R3 (4-January 2010) CJD2955 PNP CJD3055 NPN SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m