2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 3 1 1. BASE 2. EMITTER 3. COLLECTOR FEATURES: 2 SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit:mm A SOT-323 B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 1/4 Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 20-Jan-2011 WEITRON 2SC4215 Maximum Ratings ( TA=25°C unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current -Continuous IC 20 mA Collector Power Dissipation PD 100 mW Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C Rating ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) Parameter Symbol Min Typ Max Unit V (BR)CBO 40 - - V V (BR)CEO 30 - - V V (BR)EBO 4 - - V I CBO - - 0.1 µA I EBO - - 0.5 µA hFE 40 - 200 - fT 260 550 - MHz Cre - 0.55 - pF C C · rbb - - 25 pS NF - 2 5 dB Gpe 17 23 - dB Collector-base breakdown voltage I C = 100µA, I E =0 Collector-emitter breakdown voltage I C = 1mA, I B =0 Emitter-base breakdown voltage I E = 100µA, I C =0 VCB =40V, I E =0 VEB =4V, IC =0 DC current gain VCE =6V, I C = 1mA Transition frequency VCE =6V,I C =1mA Reverse transfer capacitance VCB =10V, f =1MHz Collector-base time constant V CB =6V,I C =1mA, f=30MHz V CC =6V,I C =1mA,f =100MHz Power gain V CC =6V,I C =1mA,f =100MHz CLASSIFICATION OF hFE Rank Range Marking WEITRON http://www.weitron.com.tw R O Y 40-80 70-140 120-200 QR QO QY 2/4 20-Jan-2011 WEITRON 2SC4215 Typical Characteristics WEITRON http://www.weitron.com.tw 3/4 20-Jan-2011 WEITRON 2SC4215 WEITRON http://www.weitron.com.tw 4/4 20-Jan-2011