WEITRON 3DD13003B NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • power switching applications TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol Value Units VCBO VCEO VEBO IC PC TJ Tstg 700 400 9 1.5 0.9 150 -55 to +150 V V V A W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector cut-off current V(BR)EBO I CBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage Test conditions MIN TYP MAX Units V IC= 10mA, IB=0 700 400 IE= 1mA, IC=0 9 V 20 V 40 V CE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V V BE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT Fall time Storage time tf ts VCE=10V,IC=100mA, f =1MHz 4 MHz 0.7 4 IC=1A IB1=-IB2=0.2A µs µs CLASSIFICATION OF h FE Rank Range WEITRON hpp://www.weitron.com.tw 20-25 25-30 30-35 1/3 35-40 10-Nov-2010 3DD13003B Typical Characteristics WEITRON hpp://www.weitron.com.tw 2/3 10-Nov-2010 3DD13003B TO-92 Outline Dimensions unit:mm E H TO-92 Dim A B C D E G H J K L L C J K D A B G M in Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 WEITRON http://www.weitron.com.tw 3/3 10-Nov-2010