2SB766A PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter 1 Symbol Value Units Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -60 - - V Collector-emitter breakdown voltage V(BR)CEO IC=-2mA, IB=0 -50 - - V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 μA DC current gain hFE1 VCE=-10V, IC=-500mA 85 - 340 DC current gain hFE2 VCE=-5V, IC=-1A 50 - - Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.4 V Collector-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V VCE=-10V, IC=-50mA, f=200MHz - 200 - MHz VCB=-10V, IE=0, f=1MHz - 20 30 fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking WEITRON http://www.weitron.com.tw pF hFE Q R S 85-170 120-240 170-340 BQ BR BS 1/3 26-Dec-08 2SB766A WEITRON http://www.weitron.com.tw 2/3 26-Dec-08 2SB766A SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 26-Dec-08