WHXPCB AO4421

万和兴电子有限公司 www.whxpcb.com
AO4421
60V P-Channel MOSFET
General Description
Product Summary
The AO4421 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-60V
-6.2A
RDS(ON) (at VGS=-10V)
< 40mΩ
RDS(ON) (at VGS = -4.5V)
< 50mΩ
VDS
100% UIS Tested
100% Rg Tested
SO8
D
Top View
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
TA=70°C
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead
Rev 3: Nov 2010
C
±20
V
ID
-5
IDM
-40
A
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-6.2
TA=25°C
Power Dissipation A
Maximum
-60
W
2
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
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RθJA
RθJL
Typ
24
54
21
°C
Max
40
75
30
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-60
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-40
TJ=55°C
70
VGS=-4.5V, ID=-5A
40
50
VDS=-5V, ID=-6.2A
18
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Gate resistance
-0.74
2417
VGS=0V, VDS=-30V, f=1MHz
µA
nA
V
A
53
Forward Transconductance
Rg
-3
40
gFS
Output Capacitance
-2
32
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
-5
±100
VGS=-10V, ID=-6.2A
RDS(ON)
Units
-1
Zero Gate Voltage Drain Current
Crss
Max
V
VDS=-48V, VGS=0V
IDSS
Coss
Typ
mΩ
mΩ
S
-1
V
-4.2
A
2900
pF
179
pF
120
pF
1.9
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
46.5
55
nC
Qg(4.5V) Total Gate Charge (4.5V)
22.7
nC
9.1
nC
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-30V, ID=-6.2A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
9.2
nC
tD(on)
Turn-On DelayTime
9.8
ns
tr
Turn-On Rise Time
6.1
ns
VGS=-10V, VDS=-30V, RL=4.7Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
44
ns
12.7
ns
trr
Body Diode Reverse Recovery Time
IF=-6.2A, dI/dt=100A/µs
34
Qrr
Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/µs
47
42
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev 3: Nov 2010
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
25
-10V
-4V
-4.5V
20
-5V
-3.5V
-6V
20
15
-ID(A)
-ID (A)
VDS=-5V
25
15
10
10
125°C
VGS=-3V
5
5
25°C
0
0
0
1
2
3
4
5
1
1.5
45
Normalized On-Resistance
RDS(ON) (mΩ )
2.5
3
3.5
4
2.00
VGS=-4.5V
40
35
VGS=-10V
VGS=-10V
ID=-6.2A
1.80
1.60
VGS=-4.5V
ID=-5A
1.40
1.20
1.00
0.80
30
0
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
90
1.0E+00
ID=-6.2A
125°C
80
1.0E-01
70
125°C
-IS (A)
RDS(ON) (mΩ )
2
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
60
1.0E-02
1.0E-03
50
1.0E-04
25°C
40
1.0E-05
25°C
30
1.0E-06
20
2
3
4
5 -VGS
6 (Volts)
7
8
9
10
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 3: Nov 2010
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
3500
10
VDS=-30V
ID=-6.2A
3000
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
2500
2000
1500
1000
2
Coss
Crss
500
0
0
0
10
20
30
40
50
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
100
1000
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
0.1s
10µs
30
Power (W)
-ID (Amps)
30
40
TJ(Max)=150°C, T A=25°C
1.0
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
10
10ms
1s
20
10
10s
DC
0
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
Rev 3: Nov 2010
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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100
1000
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