万和兴电子有限公司 www.whxpcb.com AO4455 30V P-Channel MOSFET General Description Product Summary The AO4455 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ * RoHS and Halogen-Free Complaint ESD Protected 100% UIS tested 100% Rg tested (VGS = -20V) (VGS = -20V) (VGS = -10V) SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.1.0: July 2013 Maximum -30 Units V ±25 V -17 ID -14 IDM -182 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL www.aosmd.com Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W Page 1 of 5 AO4455 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=-250µA, VGS=0V -30 Static Drain-Source On-Resistance -1 TJ=55°C -5 ±1 µA ±10 µA -2.1 -2.6 V 5 6.2 7.2 9 VDS=VGS ID=-250µA -1.5 TJ=125°C VGS=-10V, ID=-15A 5.7 7.2 mΩ 7.4 9.5 mΩ 48 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current -0.7 DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance Rg Gate resistance 2823 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr mΩ VGS=-6V, ID=-10A VDS=-5V, ID=-15A Crss µA VDS=0V, VGS=±25V Forward Transconductance Output Capacitance Units VDS=0V, VGS=±20V gFS Coss Max V VDS=-30V, VGS=0V VGS=-20V, ID=-15A RDS(ON) Typ VGS=-10V, VDS=-15V, ID=-15A S -1 V -4.2 A 3400 pF 574 2.1 pF 424 600 pF 4.0 6.4 Ω 54 76 nC 9 nC Gate Drain Charge 16 nC Turn-On DelayTime 12.5 ns VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 12.5 ns 49 ns IF=-15A, dI/dt=100A/µs 22.3 109 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs ns 32 8.8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev.1.0: July 2013 www.aosmd.com Page 2 of 5 AO4455 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 -4.5V VDS=-5V -4V -10V 40 40 -6V 125°C 30 -ID(A) -ID (A) 30 20 10 25°C 20 -3.5V 10 VGS=-3V 0 0 0 1 2 3 4 5 2 3 3.5 4 4.5 5 1.7 8 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 VGS=-6V VGS=-10V 6 VGS=-20V 1.6 VGS=-20V ID = -15A 1.5 VGS=-10V ID = -15A 1.4 1.3 1.2 VGS=-6V ID = -10A 1.1 1.0 0.9 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 1.0E+01 16 -12.8 ID=-15A 1.0E+00 14 125°C 1.0E-01 12 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 10 125°C 1.0E-02 1.0E-03 8 1.0E-04 6 25°C 1.0E-05 25°C 4 4 8 12 16 20 1.0E-06 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.1.0: July 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 5 AO4455 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 Ciss 3000 Capacitance (pF) -VGS (Volts) 3500 VDS=-15V ID=-15A 8 6 4 2500 2000 1500 Coss 1000 2 500 0 10 20 30 40 50 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 60 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 Crss 0 0 10000 RDS(ON) limited TJ(Max)=150°C TA=25°C 10µs 1000 Power (W) -ID (Amps) 100µs 10.0 1ms 10ms 1.0 0.1s 1s 0.1 100 10 10s DC TJ(Max)=150°C TA=25°C 1 0.0 0.1 1 10 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe -15 10 Zθ JA Normalized Transient Thermal Resistance 0.001 -12.8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 Single Pulse T 0.001 0.00001 0.0001 Rev.1.0: July 2013 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.aosmd.com 100 1000 Page 4 of 5 AO4455 万和兴电子有限公司 www.whxpcb.com G ate C harge Test C ircuit & W aveform V gs Qg -10V - - VDC + VDC Q gs V ds Q gd + DUT V gs Ig C harge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & W aveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: July 2013 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5