万和兴电子有限公司 www.whxpcb.com AO4447 30V P-Channel MOSFET General Description Product Summary The AO4447 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current AF Pulsed Drain Current TA=70°C Avalanche Current G Power Dissipation A G Junction and Storage Temperature Range Maximum Junction-to-Lead C ±20 V ID -13.6 IDM -60 IAR 40 A EAR 240 mJ -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V -15 B Repetitive avalanche energy L=0.3mH TA=25°C Maximum -30 RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4447 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.9 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 RDS(ON) Static Drain-Source On-Resistance TJ=55°C TJ=125°C VGS=-4V, ID=-13A Forward Transconductance VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Gate Charge Gate Source Charge Qgd tD(on) tr Turn-On Rise Time -1.25 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-15A -1.6 µA µA V A 6.7 7.5 9.4 12 9.2 12 60 -0.69 5500 SWITCHING PARAMETERS Qg Total Gate Charge Qgs -10 ±10 VGS=-10V, ID=-15A VSD Units -1 Zero Gate Voltage Drain Current gFS Max V VDS=-30V, VGS=0V IDSS Crss Typ mΩ mΩ S -1 V 5.5 A 6600 pF 745 pF 473 pF 3.1 4 Ω 88.8 120 nC 45.2 60 nC 10.1 nC Gate Drain Charge 19.4 nC Turn-On DelayTime 12 ns 11.5 ns VGS=-10V, VDS=-15V, RL=1.7Ω, RGEN=3Ω 100 ns 40 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 46.6 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 67.7 60 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev7: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 25 -10V VDS=-5V -3.5V 50 20 -3V 15 -ID(A) -ID (A) 125°C -4V 40 30 10 20 25°C VGS=-2.5V 10 5 0 0 0 1 2 3 4 1 5 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 1.6 Normalized On-Resistance RDS(ON) (mΩ ) 12 VGS=-4V 10 8 VGS=-10V 6 VGS=-4V ID=-13A 1.4 VGS=-10V ID=-15A 1.2 1 0.8 0.6 0 5 10 15 20 25 -50 -25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+01 ID=-15A 25 1.0E+00 125°C 1.0E-01 20 15 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics 125°C 1.0E-02 25°C 1.0E-03 10 1.0E-04 25°C 5 1.0E-05 0 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4447 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-15V ID=-15A 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8 6 4 5000 4000 3000 Crss Coss 2000 2 1000 0 0 0 20 40 60 80 100 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 80 1ms Power (W) -ID (Amps) 10ms 0.1s 1s 1.0 10s TJ(Max)=150°C TA=25°C 30 TJ(Max)=150°C TA=25°C 100µs 10.0 60 40 20 DC 0.1 0.1 10 100 10µs RDS(ON) limited 5 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com