RoHS 1SS133 D T ,. L High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications IC High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings R T Ta=25℃ Parameter Peak reverse voltage Symbol Limits VRM 90 V VR 80 Peak forward current IFM Mean rectifying current Io E N Symbol Value Unit Surge current(1s) Isurge 600 mA V Power dissipation P 300 mW 400 mA Junction temperature Tj 175 ℃ 130 mA Storage temperature Tstg -65~+175 ℃ C E L DC reverse voltage Unit O C O Parameter Electrical Characteristics J E Ta=25℃ Parameter Symbol Min. Typ. Max. Unit VF - 0.92 1.2 V IR - 0.02 0.5 μA VR=80V Capacitance between terminals CT - 1.55 2 pF VR=0.5V,f=1MHz Reverse recovery time trr - 1.5 4 ns VR=6V,IF=10mA,RL=50 Forward voltage Reverse current W WEJ ELECTRONIC CO. Http:// www.wej.cn Conditions IF=100mA E-mail:[email protected] RoHS RoHS 1SS133 Dimensions in mm D T ,. L Cathode identification Cathode Anode 1.8±0.2 29±1 Standard Glass Case JEDEC DO 34 R T J E IC 2.7±0.3 O C 29±1 0.4±0.1 O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS133 Reverse current: IR(nA) Forward current: IF(mA) Characteristics (Ta=25℃ unless specified otherwise) Forward voltage: VF (V) R T Reverse recovery time: trr(ns) Capacitance between terminals: CT(pF) Surge current: Isurge(A) W J E IC Figure 2. Reverse characteristics C E L Figure 3. Capacitance between terminals characteristics O Reverse voltage: VR (V) Figure 1. Forward characteristics Reverse voltage: VR (V) C D T ,. L O N Forward current: IF (mA) Figure 4. Reverse recovery time characteristics E Pulse width: Tw (ms) Figure 5. Surge current characteristics WEJ ELECTRONIC CO. Figure 6. Reverse recovery time (trr) measurement circuit Http:// www.wej.cn E-mail:[email protected]