RoHS 1N914 D T ,. L Fast switching diode Features 1. High reliability 2. High conductance 3. Fast switching speed (trr≤4 ns) Applications IC For general purpose switching applications Construction Silicon epitaxial planar R T Absolute Maximum Ratings Tj=25℃ Parameter C E L Non repetitive peak reverse voltage Repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward current E Average rectified current J E O C O N Test Conditions Half wave rectification with Symbol Value Unit VRM 100 V VRRM 75 V VRWM 75 V VR 75 V VR(RMS) 53 V IF 300 mA IFAV 200 mA resistive load and f>50MHz Non repetitive peak forward surge t=1s IFSM 1 A current t=1µs IFSM 4 A Pd 500 mW Tstg -65~+175 ℃ Power dissipation I=4mm TL=25℃ W Storage temperature range WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1N914 Figure 3. Reverse current vs. junction temperature Dimensions in mm IC C D T ,. L O N Figure 4. Diode capacitance vs. reverse voltage (Typical values) R T O Cathode identification C E L Cathode φ2.0 max. J E W E 26 min. 4.2 max. φ0.55 max. Anode 26 min. Standard Glass Case JEDEC DO 35 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1N914 Maximum Thermal Resistance D T ,. L Tj=25℃ Parameter Junction ambient Test Conditions Symbol Value RthJA 300 I=4mm, TL=constant Unit K/W Electrical Characteristics Tj=25℃ Parameter Test Conditions Symbol Forward voltage IF=10mA VF Peak reverse current VR=20V IR VR=20V, Tj=150℃ IR IC VR=75V IR Breakdown voltage IR=100μA Diode capacitance VR=0, f=1MHz Reverse recovery time IF=10mA to IR=1mA, VR=6V, RL=100Ω VR O Min N CD trr O Typ C Max Unit 1 V 25 nA 50 μA 5 μA 100 V 4 pF 4 ns Characteristics (Tj=25℃ unless otherwise specified) R T J E W C E L E Figure 1. Maximum permissible continuous forward current vs. ambient temperature WEJ ELECTRONIC CO. Figure 2. Forward current vs. forward voltage Http:// www.wej.cn E-mail:[email protected]