1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions (Unit : mm) CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction Silicon epitaxial planar zTaping specifications (Unit : mm) Symbol BROWN A H2 BLUE T-72 Ａ E Standard dimension value(mm) T-77 52.4±1.5 +0.4 0 26.0 T-72 5.0±0.5 T-77 5.0±0.3 T-72 C 1.0 max. T-77 T-72 D 0 T-77 T-72 1/2A±1.2 E T-77 1/2A±0.4 T-72 0.7 max. Ｆ T-77 0.2 max. T-72 H1 6.0±0.5 T-77 T-72 H2 5.0±0.5 T-77 T-72 1.5 max. |L1-L2| T-77 0.4 max. ＊H1(6mm)：BROWN B B C L1 L2 F D H1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward voltage (repetitive peak) Average rectified forward current Surge current (1s) Power dissipation Junction temperature Storage temperature Limits 90 80 400 130 600 300 175 -65 to 175 Symbol VRM VR IFM Io Isurge P Tj Tstg Unit V V mA mA mA mW ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminal Reverse recovery time Symbol VF IR Ct Min. - Typ. - Max. 1.2 0.5 2 Unit V µA pF Trr - - 4.0 ns Conditions IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V,IF=10mA,RL=50Ω,Irr=1/10 IR Rev.C 1/3 1SS133 Diodes zElectrical characteristics curves (Ta=25°C) Ta=25℃ 10 Ta=-25℃ Ta=175℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(nA) Ta=125℃ 10000 Ta=75℃ 1000 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE：VF(V) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 0 80 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ VR=80V n=30pcs REVERSE CURRENT:IR(nA) 90 930 920 AVE:925.7mV 910 80 70 60 50 AVE:21.3nA 40 30 20 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0 0 VF DISPERSION MAP AVE:0.803pF 0.5 10 900 Ct DISPERSION MAP IR DISPERSION MAP 20 20 RESERVE RECOVERY TIME:trr(ns) 3 1cyc Ifsm 15 8.3ms 10 AVE:11.6A 5 Ta=25℃ VR=6V IF=10mA RL=50Ω n=10pcs 2.5 2 1.5 1 AVE:1.46ns 0.5 0 0 30 Ta=25℃ VR=0.5V f=1MHz n=10pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=100mA n=30pcs 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 100 950 940 1 0.1 0 1.2 PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) 100000 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=175℃ Ta=75℃ FORWARD VOLTAGE:VF(mV) 10 1000000 100 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 1 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 1000 t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=1mA 0.20 IF=50mA Rth(j-a) 1ms time 300us Rth(j-l) 100 10 0.001 Rth(j-c) D=1/2 REVERSE POWER DISSIPATION:PR (W) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 DC Sin(θ＝180) 0.10 0.00 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.05 0.10 0.15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 0.20 2/3 1SS133 Diodes 20 0.20 0.20 0.15 D=1/2 0.10 Io 0A 0V 0.05 t T VR D=t/T VR=40V Tj=175℃ 0.15 D=1/2 0.10 0A 0V 0.05 Sin(θ＝180) 0.00 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 175 Io t T 0.00 0 ELECTROSTATIC DISCHARGE TEST ESD(KV) DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC 0 VR D=t/T VR=40V Tj=175℃ Sin(θ＝180) 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 15 AVE:2.2kV 5 0 175 AVE:7.4kV 10 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1