WINNERJOIN 2SC2216

RoHS
2SC2216
2SC2216
D
T
TRANSISTOR (NPN)
TO—92
FEATURES
Power dissipation
PCM:
300
mW (Tamb=25℃)
Collector current
50
mA
ICM:
Collector-base voltage
50
V
V(BR)CBO :
Operating and storage junction temperature range
1. BASE
2. EMITTER
IC
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
C
3. COLLECTOR
TJ, Tstg: -55℃ to +150℃
N
,. L
O
1 2 3
unless otherwise specified)
O
Test
R
T
C
E
L
conditions
MIN
TYP
MAX
UNIT
Ic= 100µA, IE=0
50
V
V(BR)CEO
Ic= 10 mA , IB=0
45
V
V(BR)EBO
IE= 100µA, IC=0
4
V
ICBO
VCB=50 V
IE=0
0.1
µA
0.1
µA
IEBO
VEB= 3 V, IC=0
hFE
VCE=12.5V, IC=12.5 mA
Collector-emitter saturation voltage
VCE (sat)
IC= 15mA, IB=1.5 mA
0.2
V
Bass-emitter saturation voltage
VBE (sat)
IC= 15mA, IB=1.5 mA
1.5
V
fT
VCE=12.5 V, IC=12.5mA
f = 100 MHz
DC current gain
J
E
E
Transition frequency
40
300
140
MHz
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]