RoHS 2SC2216 2SC2216 D T TRANSISTOR (NPN) TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current C 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ N ,. L O 1 2 3 unless otherwise specified) O Test R T C E L conditions MIN TYP MAX UNIT Ic= 100µA, IE=0 50 V V(BR)CEO Ic= 10 mA , IB=0 45 V V(BR)EBO IE= 100µA, IC=0 4 V ICBO VCB=50 V IE=0 0.1 µA 0.1 µA IEBO VEB= 3 V, IC=0 hFE VCE=12.5V, IC=12.5 mA Collector-emitter saturation voltage VCE (sat) IC= 15mA, IB=1.5 mA 0.2 V Bass-emitter saturation voltage VBE (sat) IC= 15mA, IB=1.5 mA 1.5 V fT VCE=12.5 V, IC=12.5mA f = 100 MHz DC current gain J E E Transition frequency 40 300 140 MHz W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]