RoHS 2SC2073 2SC2073 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current 1.5 A ICM: Collector-base voltage V(BR)CBO: 150 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ IC Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter voltage Transition frequency Collector output capacitance N O unless otherwise specified) R T C E L Symbol C ,. L O 123 TJ, Tstg: -55℃ to +150℃ Parameter D T TO-220 Test conditions MIN TYP MAX UNIT Ic=100µA, IE=0 150 V Ic=1mA, IB=0 150 V V(BR)EBO IE=100µA, IC=0 5 V ICBO VCB=120V, IE=0 10 µA IEBO VEB=5V, IC=0 10 µA hFE(1) VCE=10V, IC=500mA VCE(sat) IC=500mA, IB=50mA VBE VCE=10V, IC=500mA fT VCE=10V, IC=500mA 4 MHz Cob VCB=10V, IE=0, f=1MHz 35 pF 40 140 0.65 1.5 V 0.85 V W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]