RoHS MCL355 High-speed switching diode Features 1. Small surface mounting type, fits onto SOD 323/SOT 23 footprints C 2. High Speed 3. High reliability with high surge current handing capability IC Applications High speed switching N Construction Silicon epitaxial planar R T Absolute Maximum Ratings Ta=25℃ Parameter C E L Peak reverse voltage DC reverse voltage Peak forward current O Symbol Limits Unit VRM 90 V VR 80 V IFM 225 mA Io 100 mA Isurge 500 mA Tj 125 ℃ Tstg -55~+125 ℃ Mean rectifying current Surge current (1s) E Junction temperature Storage temperature J E D T ,. L O Electrical Characteristics W Ta=25℃ Parameter Symbol Min. Typ. Max. Unit Forward voltage VF - 0.94 1.2 V Reverse current IR - 0.03 0.1 μA VR=80V Capacitance between terminals CT - 0.72 3.0 pF VR=0.5V,f=1MHz Reverse recovery time trr - 1.2 4.0 ns VR=6V,IF=10mA,RL=100 WEJ ELECTRONIC CO. Http:// www.wej.cn Conditions IF=100mA E-mail:[email protected] RoHS MCL355 D T ,. L Dimensions in mm Cathode identification 1.35 Φ1.25 - 0.05 Glass IC R≥2.5 C O N Glass R T 1.9±0.1 C E L Glass Case Micro Melf J E O E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MCL355 D T ,. L Reverse current: IR(nA) Forward current: IF(mA) Characteristics (Ta=25℃ unless specified otherwise) IC Forward voltage: VF (V) Reverse voltage: VR (V) N Figure 2. Reverse characteristics R T C E L O Reverse recovery time: trr(ns) Capacitance between terminals: CT(pF) Figure 1. Forward characteristics Reverse voltage: VR (V) Forward current: IF (mA) Surge current: Isurge(A) Figure 3. Capacitance between terminals characteristics J E C O Figure 4. Reverse recovery time characteristics E W Pulse width: Tw (ms) Figure 5. Surge current characteristics WEJ ELECTRONIC CO. Figure 6. Reverse recovery time (trr) measurement circuit Http:// www.wej.cn E-mail:[email protected]