WINNERJOIN 1SS245

RoHS
ISS245
D
T
,. L
High-voltage switching diode
Features
1. Small surface mounting type
2. High reliability
3. VRM=250V
IC
Applications
High voltage switch and general purpose rectification
Construction
R
T
Silicon epitaxial planar
Absolute Maximum Ratings
O
C
E
L
Tj=25℃
Parameter
N
Symbol
Value
Unit
VRM
250
V
VR
220
V
ISurge
1
A
Mean rectifying current
IO
200
mA
Peak forward current
IFM
625
mA
P
300
mW
Tj
175
℃
Tstg
-65~+175
℃
Peak reverse voltage
DC reverse voltage
Surge current
J
E
E
Power dissipation
Test Conditions
C
O
Type
tp=1s
Junction temperature
Storage temperature range
W
Maximum Thermal Resistance
Tj=25℃
Parameter
Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mm×50mm×1.6mm
RthJA
500
K/W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
ISS245
Surge current: Isurge(A)
D
T
,. L
Pulse width: Tw (ms)
C
O
Figure 6. Reverse recovery time (trr)
measurement circuit
Figure 5. Surge current characteristics
Dimensions in mm
O
IC
N
Cathode identification
1.8±0.2
R
T
Cathode
C
E
L
29±1
J
E
2.7±0.3
0.4±0.1
Anode
29±1
E
Standard Glass Case
JEDEC DO 34
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
ISS245
Electrical Characteristics
D
T
,. L
Tj=25℃
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=200mA
VF
1.13
1.5
V
Reverse current
VR=220V
IR
0.05
10
uA
Diode capacitance
VR=0, f=1MHz
CD
3
pF
Reverse recovery time
IF= IR=20mA, RL=50Ω
trr
75
ns
Reverse current: IR(nA)
Forward current: IF(mA)
Characteristics (Ta=25℃ unless specified otherwise)
C
E
L
Capacitance between terminals: CT(pF)
Figure 1. Forward characteristics
J
E
W
E
N
Figure 2. Reverse characteristics
Reverse voltage: VR (V)
Forward current: IF (mA)
Figure 3. Capacitance between terminals
characteristics
WEJ ELECTRONIC CO.
Reverse voltage: VR (V)
Reverse recovery time: trr(ns)
R
T
Forward voltage: VF (V)
O
IC
C
O
Http:// www.wej.cn
Figure 4. Reverse recovery time
characteristics
E-mail:[email protected]