WFN1N60
Silicon N-Channel MOSFET
Features
�
1.3A,600V, RDS(on)(Max8.5Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 9.1nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
Th is Power MO SFET is produced using Winse mi’s advan
ced planar stripe, VDMOS technology. This latest technology
has
been
especially
designed
to
minimize
on-state
resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch
mode power supply. electronic Lamp ballasts based on half
bridge and UPS.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
1.3
A
Continuous Drain Current(@Tc=100℃)
0.84
A
5.0
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
78
mJ
EAR
Repetitive Avalanche Energy
(Note1)
3.9
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.5
V/ ns
5
W
0.05
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
25
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
120
℃/W
Rev.A Aug.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFN1N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
100
µA
Drain cut -off current
IDSS
VDS=480V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
△TJ
Coefficient
ID=250 µA,VGS=0V
600
-
-
V
-
0.65
-
V/℃
ID=1mA,Referenced to
25℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2.0
-
4.0
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=0.65A
-
7.7
8.5
Ω
Forward Transconductance
gfs
VDS=50V,ID=6.5A
-
1.3
-
S
Input capacitance
Ciss
VDS=25V,
-
247
319
Reverse transfer capacitance
Crss
VGS=0V,
-
4.9
6.4
Output capacitance
Coss
f=1MHz
-
23
30
VDD=300V,
-
33
72
Turn-On Rise time
tr
Turn-on delay time
Td(on)
ID=1.3A
-
11
26
Turn-On Fall time
tf
RG=25Ω
-
26
59
Turn-off delay time
Td(off)
-
26
59
-
9.1
12
-
1.2
-
-
4.5
-
Min
Type
Max
Switching time
pF
ns
Total gate charge(gate-source
(Note4,5)
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=1.3A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
1.3
A
Pulse drain reverse current
IDRP
-
-
-
5.0
A
Forward voltage(diode)
VDSF
IDR=1.3A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=1.3A,VGS=0V,
-
163
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
0.85
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=92mH IAS=1.3A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤1.3A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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WFN1N60
Fig.1 On State Characteristics
Fig.3 On-Resistance Variation vs Drain
current and gate voltage
Fig.5 Capacitance characteristics
Fig.2 Transfer Characteristics
Fig.4 Body diode Forward voltage variation
vs source current and temperature
Fig.6 Gate Charge Characteristics
3/7
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WFN1N60
Fig.7 Breakdown voltage variation
Fig.8 On-Resistance variation vs
vs temperature
temperature
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case temperature
Fig.9 Transient thermal Response Curve
4/7
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WFN1N60
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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WFN1N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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WFN1N60
TO92 Package Dimension
Unit:mm
7/7
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