DATA SHEET SF1AS THRU SF1JS SEMICONDUCTOR H SURFACE MOUNT REVERSE VOLTAGE - 50 to 6 00 Volts SUP ER FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere : Halogen Free : Pb Free FEATURES Unit:inch(mm) SOD-123S •Glass passivated chip •For surface mounted applications •Low forward voltage drop and high current capability 0.112(2.85) 0.100(2.55) •Low reverse leakage current .037(0.94) TYP 0.067(1.70) 0.055(1.40) •Super fast switching for high efficiency •Plastic material has UL flammability classification 94V-0 •High temperature soldering : 260OC / 10 seconds at terminals 0.047(1.20) MAX 0.006(0.15) TYP • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHANICAL DATA 0.152(3.85) 0.140(3.55) •Case : Molded plastic •Polarity : Indicated by cathode band 0.014(0.35) MIN •Weight : 0 .01 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% UNITS SYMBOLS SF1AS SF1BS SF1CS SF1DS SF1ES SF1GS SF1JS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 Volts Maximum Average Forward Rectified Current, Volts at TL=120℃ Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current TA=25 OC At Rated DC Blocking Voltage TA=100 OC IFSM 1.0 Amps 30.0 Amps 1.25 0.95 VF IR 35.0 Cj 10.0 Typical Thermal Resistance (Note 3) RθJA 35 Operating and Storage Temperature Range TSTG -55to +150 Typical Junction capacitance (Note 2) Volts uA 100 TRR Maximum Reverse Recovery Time (Note 1) 1.7 5.0 nS pF O C /W O C NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts 3. 8.0mm2 (.013mm thick) land areas http://www.yeashin.com 1 REV.02 20110725 RATING AND CHARACTERISTIC CURVES SF1AS THRU SF1JS trr AVERAGE FORWARD CURRENT AMPERES +0.5A 0 -0.25 NOTE:1.Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF 2.Rise Time = 10ns max. 2.0 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON 0.315×0.315"(8.0×8.0mm) PAD AREAS 1.0 -1.0 SET TIME BASE FOR Source Impedance = 50 Ohms 25 1cm 50 75 100 125 150 175 LEAD TEMPERATURE, ¢J 50 ns/cm 1000 100 TJ = 125 ¢J 10 TJ = 75¢J 1 TJ = 25¢J 0.1 20 40 60 Fig. 2-MAXIMUM AVERAGE FORWARD CURRENT RATING 10 INSTANTANEOUS FORWARD CURRENT AMPERES IR-REVERSE LEAKAGE CURRENT, MICROAMPERES Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 80 100 SF1AS 1 SF1ES SF1JS 0.1 T J = 25 ¢J 0.01 0.001 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE VOLTS Fig. 3-TYPICAL REVERSE CHARACTERISTICS Fig. 4-TYPICAL FORWARD CHARACTERISTICS 14 30 JUNCTION CAPACITANCE, pF PEAK FORWARD SURGE CURRENT, AMPERES % OF PIV. VOLTS 25 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD 20 15 10 5 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 10 TJ = 25¢J f = 1.0MHz Vsig = 50mVp-p 8.0 6.0 4.0 2.0 .1 1 10 100 REVERSE VOLTAGE, VOLTS Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT http://www.yeashin.com 12 Fig. 6-TYPICAL JUNCTION CAPACITANCE 2 REV.02 20110725 SF1AS THRU SF1JS MOUNTING PAD LAYOUT S http://www.yeashin.com 3 REV.02 20110725