YEASHIN SF1AS

DATA SHEET
SF1AS THRU SF1JS
SEMICONDUCTOR
H
SURFACE MOUNT REVERSE VOLTAGE - 50 to 6 00 Volts
SUP ER FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere
: Halogen Free
: Pb Free
FEATURES
Unit:inch(mm)
SOD-123S
•Glass passivated chip
•For surface mounted applications
•Low forward voltage drop and high current capability
0.112(2.85)
0.100(2.55)
•Low reverse leakage current
.037(0.94)
TYP
0.067(1.70)
0.055(1.40)
•Super fast switching for high efficiency
•Plastic material has UL flammability classification 94V-0
•High temperature soldering : 260OC / 10 seconds at terminals
0.047(1.20)
MAX
0.006(0.15)
TYP
• Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
MECHANICAL DATA
0.152(3.85)
0.140(3.55)
•Case : Molded plastic
•Polarity : Indicated by cathode band
0.014(0.35)
MIN
•Weight : 0 .01 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
UNITS
SYMBOLS
SF1AS
SF1BS
SF1CS
SF1DS
SF1ES
SF1GS
SF1JS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
600
Volts
Maximum Average Forward Rectified Current,
Volts
at TL=120℃
Peak Forward Surge Current 8.3ms single half
sinewave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current TA=25 OC
At Rated DC Blocking Voltage TA=100 OC
IFSM
1.0
Amps
30.0
Amps
1.25
0.95
VF
IR
35.0
Cj
10.0
Typical Thermal Resistance (Note 3)
RθJA
35
Operating and Storage Temperature Range
TSTG
-55to +150
Typical Junction capacitance (Note 2)
Volts
uA
100
TRR
Maximum Reverse Recovery Time (Note 1)
1.7
5.0
nS
pF
O
C /W
O
C
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
3. 8.0mm2 (.013mm thick) land areas
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
SF1AS THRU SF1JS
trr
AVERAGE FORWARD
CURRENT AMPERES
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
2.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
25
1cm
50
75
100 125 150 175
LEAD TEMPERATURE, ¢J
50 ns/cm
1000
100
TJ = 125 ¢J
10
TJ = 75¢J
1
TJ = 25¢J
0.1
20
40
60
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
10
INSTANTANEOUS FORWARD CURRENT AMPERES
IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
80
100
SF1AS
1
SF1ES
SF1JS
0.1
T J = 25 ¢J
0.01
0.001
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
14
30
JUNCTION CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT, AMPERES
% OF PIV. VOLTS
25
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
20
15
10
5
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
10
TJ = 25¢J
f = 1.0MHz
Vsig = 50mVp-p
8.0
6.0
4.0
2.0
.1
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
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Fig. 6-TYPICAL JUNCTION CAPACITANCE
2
REV.02 20110725
SF1AS THRU SF1JS
MOUNTING PAD LAYOUT
S
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3
REV.02 20110725