CED1012L/CEU1012L N-Channel Enhancement Mode Field Transistor FEATURES 120V , 10A , RDS(ON)=120mΩ @VGS=5V Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK) G D S CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS ĆȀ20 V Parameter Drain Current-Continuous -Pulsed ID 10 A IDM 40 A Drain-Source Diode Forward Current IS 10 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 50 0.3 W W/ C TJ, TSTG -65 to 175 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 3 C/W Thermal Resistance, Junction-to-Ambient RįJA 50 C/W 6-7 CED1012L/CEU1012L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250µA Zero Gate Voltage Drain Current IDSS VDS=120V, VGS=0V Gate-Body Leakage IGSS VGS=Ć20V, VDS=0V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=5V, ID=10A On-State Drain Current ID(ON) gFS VGS=10V, VDS=10V 10 VDS=10V, ID= 5A 3 OFF CHARACTERISTICS 6 120 V 25 µA Ć100 nA ON CHARACTERISTICS a Forward Transconductance 1 1.6 3 100 120 V mΩ A 9.5 S 960 PF 178 PF 65 PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD =30V, ID = 10A, VGS = 5V, RGEN = 9Ω 42 50 ns 85 130 ns 60 80 ns Fall time tf 45 90 ns Total Gate Charge Qg 27.5 33 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =96V, ID = 10A, VGS = 5V 6-8 5 nC 16 nC CED1012L/CEU1012L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS a Diode Forward Voltage VGS = 0V, Is = 10A VSD 0.86 1.2 6 Notes a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 12 20 VGS=10,9,8,7,6,5,4V 25 C -55 C ID, Drain Current (A) ID, Drain Current (A) 10 8 VGS=3V 6 4 2 0 0 1 2 3 4 5 125 C 10 5 4 5 6 7 8 9 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.3 RDS(ON), Normalized Drain-Source, On-Resistance 3000 C, Capacitance (pF) 15 0 6 2500 2000 1500 Ciss 1000 500 Coss Crss 0 0 VGS=10V 1.2 Tj=125 C 1.1 25 C 1.0 0.9 -55 C 0.8 0 5 10 15 20 25 0 5 10 15 20 25 ID, Drain Current(A) VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 6-9 V BVDSS, Normalized Drain-Source Breakdown Voltage 1.06 VDS=VGS ID=250ijA 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 0 25 50 75 100 125 150 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 50 75 100 125 150 20.0 12 VGS=0V 10.0 VDS=10V 10 Is, Source-drain current (A) gFS, Transconductance (S) 25 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 8 6 4 2 1 0.1 0 0 5 10 15 20 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current 10 90 ID, Drain Current (A) VDS=96V ID=10A 8 6 4 2 0 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) VGS, Gate to Source Voltage (V) 6 Vth, Normalized Gate-Source Threshold Voltage CED1012L/CEU1012L 0 6 12 18 24 30 36 42 RD Qg, Total Gate Charge (nC) ( Lim it 10 10 10 1m 10 DC 0ij ij s s s ms VGS=10V Single Pulse Tc=25 C 1 0.5 48 S ) ON 1 10 120 300 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 6-10 6-11