CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK) G D S S CED SERIES TO-251(l-PAK) ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS Ć 30 V A A A Parameter Drain Current-Continuous (Tc=25 C) -Continuous (Tc=100 C) -Pulsed IDM 1.9 1.2 6 Drain-Source Diode Forward Current IS 6 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 43 0.34 W W/ C Operating and Storage Temperautre Range ID ID TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 2.9 C/W Thermal Resistance, Junction-to-Ambient RįJA 50 C/W 6-77 CED02N6/CEU02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Condition Symbol Min Typ Max Unit a DRAIN-SOURCE AVALANCHE RATING 6 Single Pulse Drain-Source Avalanche Energy EAS Maximum Drain-Source Avalanche Current IAS VDD =50V, L=60mH RG=9.1Ω 125 mJ 2 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć30V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 1A On-State Drain Current ID(ON) gFS VGS = 10V, VDS = 10V VDS = 50V, ID = 1A 1.2 tD(ON) VDD = 300V, ID = 2A, VGS = 10V RGEN=18Ω 18 35 ns 18 35 ns 50 90 ns 600 V 25 µA Ć100 nA ON CHARACTERISTICS a Forward Transconductance 2 3.8 4 V 5.0 Ω 2 A S b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tr tD(OFF) Fall Time tf 16 40 ns Total Gate Charge Qg 20 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =480V, ID = 2A, VGS =10V 6-78 2 nC 12 nC CED02N6/CEU02N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 250 PF 50 PF 30 PF a VGS = 0V, Is =2A VSD 1.5 Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 3.0 VGS=10,9,8,7V ID, Drain Current (A) ID, Drain Current(A) 2.5 2.0 1.5 VGS=6V 1.0 VGS=5V 0.5 150 C 1 -55 C 0.1 0 0 2 4 6 8 10 2 12 1.VDS=40V 2.Pulse Test 25 C 4 6 8 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 6-79 V 6 CED02N6/CEU02N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 C, Capacitance (pF) 500 400 Ciss 300 200 Coss 100 Crss 0 0 6 5 10 15 20 25 2.2 ID=1A VGS=10V 1.9 1.6 1.3 1.0 0.7 0.4 -100 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 VDS=VGS ID=250ijA 1.10 1.0 0.90 0.80 0.70 0 25 50 150 200 75 100 125 150 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20 10 4 VDS=50V Is, Source-drain current (A) gFS, Transconductance (S) 100 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 0.60 -50 -25 50 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) 1.20 0 -50 3 2 1 VGS=0V 1 0.1 0 0 1 2 3 4 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 6-80 Figure 8. Body Diode Forward Voltage Variation with Source Current CED02N6/CEU02N6 10 VDS=480V ID=2A 12 100 ijs ID, Drain Current (A) VGS, Gate to Source Voltage (V) 15 9 6 3 0 0 6 12 R DS (O N) Li 10ms DC 0.1 0.01 24 18 1 1ms t mi TC=25C Tj=25 C Single Pulse 1 6 Qg, Total Gate Charge (nC) 500 1000 100 10 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 PDM 0.05 t1 t2 0.02 0.01 0.01 0.01 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 0.1 1 10 100 1000 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 6-81 10000