CEP06N5/CEB06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES TO-263(DD-PAK) G D S S CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS Ć 30 V ID 6.6 A -Pulsed IDM 20 A Drain-Source Diode Forward Current IS 6.6 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 104 0.83 W W/ C Parameter Drain Current-Continuous Operating and Storage Temperautre Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 1.2 C/W Thermal Resistance, Junction-to-Ambient RįJA 62.5 C/W 4-17 44 CEP06N5/CEB06N5 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 44 Parameter Condition Symbol Min Typ Max Unit a DRAIN-SOURCE AVALANCHE RATING Single Pulse Drain-Source Avalanche Energy EAS Maximum Drain-Source Avalanche Current IAS VDD =50V, L=24mH RG=25Ω 500 mJ 6 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć30V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 4A On-State Drain Current ID(ON) gFS VGS = 10V, VDS = 10V VDS = 50V, ID = 4A 4 tD(ON) VDD =250V, ID = 6A, VGS = 10V RGEN=18Ω 23 45 ns 35 70 ns 162 240 ns 500 V 25 µA Ć100 nA ON CHARACTERISTICS a Forward Transconductance 2 4 0.85 1.0 6 V Ω A S b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tr tD(OFF) Fall Time tf 44 90 ns Total Gate Charge Qg 54 65 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =400V, ID = 6A, VGS =10V 4-18 9 nC 27 nC CEP06N5/CEB06N5 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 823 PF 110 PF 64 PF a VGS = 0V, Is =6A VSD 1.5 Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 12 VGS=10,9,8,7V 10 ID, Drain Current (A) ID, Drain Current(A) 10 8 VGS=6V 6 4 VGS=5V 2 150 C 1 -55 C 0.1 0 0 2 4 6 8 10 2 12 1.VDS=40V 2.Pulse Test 25 C 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 4-19 V 44 CEP06N5/CEB06N5 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 C, Capacitance (pF) 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 ID=4 VGS=10V 1.9 1.6 1.3 1.0 0.7 0.4 -100 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 VDS=VGS ID=250ӴA 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 50 100 150 200 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 1.20 0 -50 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) 75 100 125 150 1.15 ID=250ӴA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20 10 4 VDS=50V Is, Source-drain current (A) gFS, Transconductance (S) 44 2.2 3 2 1 VGS=0V 1 0.1 0 0 1 2 3 4 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 4-20 Figure 8. Body Diode Forward Voltage Variation with Source Current CEP06N5/CEB06N5 10 VDS=400V ID=6A it ID, Drain Current (A) Lim N) (O S RD 10 80 60 s 40 m -1 20 44 10 0 0 0 s 3 C 6 s D 9 0ij 1m 12 10 1 10 VGS, Gate to Source Voltage (V) 15 TC=25 C Tj=150 C Single Pulse 10 1 10 0 Qg, Total Gate Charge (nC) 10 2 10 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 11. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 0.1 PDM t1 0.05 t2 0.02 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 4-21 10 1 3