CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS Ć30 V ID 2.5 A -Pulsed IDM 10 A Drain-Source Diode Forward Current IS 2.5 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 35 0.28 W W/ C Drain Current-Continuous Operating and Storage Temperautre Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 3.6 C/W Thermal Resistance, Junction-to-Ambient RįJA 65 C/W 6-122 CEF04N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Condition Symbol Min Typ Max Unit a DRAIN-SOURCE AVALANCHE RATING Single Pulse Drain-Source Avalanche Energy EAS Maximum Drain-Source Avalanche Current IAS VDD =50V, L=27mH RG=9.1Ω 500 mJ 4 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć30V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2A On-State Drain Current ID(ON) gFS VGS = 10V, VDS = 10V VDS = 40V, ID = 2A 2.8 tD(ON) VDD =300V, ID = 4A, VGS = 10V RGEN=25Ω 25 50 ns 65 120 ns 75 150 ns 600 V 25 µA Ć100 nA ON CHARACTERISTICS a Forward Transconductance 2 2.2 4 V 2.5 Ω 4 A S b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tr tD(OFF) Fall Time tf 65 120 ns Total Gate Charge Qg 24 31 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =480V, ID = 4A, VGS =10V 6-123 4 nC 11 nC 6 CEF04N6 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DYNAMIC CHARACTERISTICS b CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =25V, VGS = 0V f =1.0MHZ DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage 730 PF 85 PF 20 PF a VGS = 0V, Is =2.5A VSD 1.6 Notes a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 6 VGS=10,9,8,7V 10 ID, Drain Current (A) 5 ID, Drain Current(A) 6 Input Capacitance 4 VGS=6V 3 2 VGS=5V 1 150 C 1 -55 C 1.VDS=40V 2.Pulse Test 25 C 0.1 0 0 2 4 6 8 10 2 12 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 6-124 Figure 2. Transfer Characteristics V CEF04N6 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 C, Capacitance (pF) 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 2.2 ID=2A VGS=10V 1.9 1.6 1.3 1.0 0.7 0.4 -100 VDS=VGS ID=250ijA 1.10 1.0 0.90 0.80 0.70 25 50 75 100 125 150 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.30 0 150 200 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20 10 4 VDS=40V Is, Source-drain current (A) gFS, Transconductance (S) 100 Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 0.60 -50 -25 50 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) 1.20 6 0 -50 3 2 1 VGS=0V 1 0.1 0 0 1 2 3 4 0.4 IDS, Drain-Source Current (A) 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 6-125 Figure 8. Body Diode Forward Voltage Variation with Source Current CEF04N6 VDS=480V ID=4A )L im it s ON TC=25 C Tj=150 C Single Pulse 10 1 10 0 40 30 R ( DS s 20 s m 10 0ij C -1 10 0 0 10 s 0m 3 10 0 D 6 1m 10 9 6 10 1 ID, Drain Current (A) 12 10 VGS, Gate to Source Voltage (V) 15 Qg, Total Gate Charge (nC) 10 2 10 VDS, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 11. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 0.02 0.01 10 -2 -5 10 Single Pulse 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 6-126 10 1 3