SHINDENGEN VX-2 Series Power MOSFET 2SK2180 (F3V50VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case Case :: E-pack TO-220 (Unit : mm) 500V3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. APPLICATION ● Switching power supply of AC 100V input ● High voltage power supply ● Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（DC） IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch = 25℃ Mounting Torque TOR （Recommended torque : 0.3 N･m ） Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55∼150 150 500 ±30 3 9 3 40 3 0.5 Unit ℃ V A W A N･m VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage θjc Theｒmal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time 2SK2180 ( F3V50VX2 ) Conditions ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = ±30V, VDS = 0V ID = 1.5A, VDS = 10V ID = 1.5A, VGS = 10V ID = 0.3mA, VDS = 10V IS = 1.5A, VGS = 0V junction to case VDD = 400V, VＧＳ ＝ 10V, ID = 3A VDS = 10V, VGS = 0V, f = 1MHZ ID = 1.5A, VGS = 10V, RL = 100Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 500 Typ. Max. 250 ±0.1 0.9 2.5 2.1 1.8 3.0 15 400 30 90 45 90 Unit V μA S 2.3 Ω 3.5 V 1.5 3.12 ℃/Ｗ nC pF 80 140 ns 2SK2180 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 100 10 ID = 1.5A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2180 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 100 10-3 10-2 2SK2180 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SK2180 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150