DATA SHEET MOS INTEGRATED CIRCUIT µPD464318AL, 464336AL 4M-BIT Bi-CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 18-BIT / 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD464318AL is a 262,144 words by 18 bits, and the µPD464336AL is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced Bi-CMOS technology using N-channel memory cell. This technology and unique peripheral circuits make the µPD464318AL and µPD464336AL a high-speed device. The µPD464318AL and µPD464336AL are suitable for applications which require high-speed, low voltage, highdensity memory and wide bit configuration, such as cache and buffer memory. These are packaged in a 119-pin plastic BGA (Ball Grid Array). Features • Fully synchronous operation • HSTL Input / Output levels • Fast clock access time : 2.0 ns / 250 MHz, 2.3 ns / 225 MHz, 2.5 ns / 200 MHz • Asynchronous output enable control : /G • Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9) • Common I/O using three-state outputs • Internally self-timed write cycle • Late write with 1 dead cycle between Read-Write • User-configurable outputs : Controlled impedance outputs or push-pull outputs • Boundary scan (JTAG) IEEE 1149.1 compatible • 3.3 V (Chip) / 1.5V (I/O) supply • 119 bump BGA package, 1.27 mm pitch, 14 mm x 22 mm • Sleep mode : ZZ(Enables sleep mode, active high) Ordering Information Part number Access time Clock frequency Package µPD464318ALS1-A4 2.0 ns 250 MHz 119-pin plastic BGA µPD464318ALS1-A44 2.3 ns 225 MHz µPD464318ALS1-A5 2.5 ns 200 MHz µPD464336ALS1-A4 2.0 ns 250 MHz µPD464336ALS1-A44 2.3 ns 225 MHz µPD464336ALS1-A5 2.5 ns 200 MHz The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. M13508EJ2V0DSJ1 (2nd edition) Date Published December 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1999 µPD464318AL, 464336AL Pin Configurations /xxx indicates active low signal. 119-pin Plastic BGA (256K Words by 18 Bits Pin Assignment) [ µPD464318ALS1 ] Bottom View Top View A B C D E F G H J K L M N P R T U 1 2 3 4 5 6 7 7 6 5 4 3 2 1 2 7 6 5 4 3 2 1 1 2 3 4 5 6 7 VDDQ SA2 SA6 NC SA9 SA12 VDDQ A VDDQ SA12 SA9 NC SA6 SA2 VDDQ NC NC SA16 NC SA17 NC NC B NC NC SA17 NC SA16 NC NC NC SA3 SA7 VDD SA10 SA13 NC C NC SA13 SA10 VDD SA7 SA3 NC NC DQa9 VSS ZQ VSS NC DQb1 D DQb1 NC VSS ZQ VSS DQa9 NC DQa8 NC VSS /SS VSS DQb2 NC E NC DQb2 VSS /SS VSS NC DQa8 VDDQ DQa7 VSS /G VSS NC VDDQ F VDDQ NC VSS /G VSS DQa7 VDDQ DQa6 NC VSS NC /SBb DQb3 NC G NC DQb3 /SBb NC VSS NC DQa6 NC DQa5 VSS NC VSS NC DQb4 H DQb4 NC VSS NC VSS DQa5 NC VDDQ VDD VREF VDD VREF VDD VDDQ J VDDQ VDD VREF VDD VREF VDD VDDQ DQa4 NC VSS K VSS DQb5 NC K NC DQb5 VSS K VSS NC DQa4 NC DQa3 /SBa /K VSS NC DQb6 L DQb6 NC VSS /K /SBa DQa3 NC VDDQ NC VSS /SW VSS DQb7 VDDQ M VDDQ DQb7 VSS /SW VSS NC VDDQ NC DQa2 VSS SA1 VSS NC DQb8 N DQb8 NC VSS SA1 VSS DQa2 NC DQa1 NC VSS SA0 VSS DQb9 NC P NC DQb9 VSS SA0 VSS NC DQa1 NC SA4 M2 VDD M1 SA14 NC R NC SA14 M1 VDD M2 SA4 NC ZZ SA5 SA8 NC SA11 SA15 NC T NC SA15 SA11 NC SA8 SA5 ZZ VDDQ NC TDO TCK TDI TMS VDDQ U VDDQ TMS TDI TCK TDO NC VDDQ Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL Pin Name and Functions [µPD464318ALS1] Pin name Description Function VDD Core Power Supply Supplies power for RAM core VSS Ground VDDQ Output Power Supply VREF Input Reference K, /K Main Clock Input SA0 to SA17 Synchronous Address Input DQa1 to DQb9 Synchronous Data Input / Output /SS Synchronous Chip Select Logically selects SRAM /SW Synchronous Byte Write Enable Write command /SBa Synchronous Byte "a" Write Enable Write DQa1 to DQa9 /SBb Synchronous Byte "b" Write Enable Write DQb1 to DQb9 /G Asynchronous Output Enable Asynchronous input ZZ Asynchronous Sleep Mode Enables sleep mode, active high ZQ Output Impedance Control M1, M2 Mode select NC No Connection TMS Test Mode Select (JTAG) TDI Test Data Input (JTAG) TCK Test Clock Input (JTAG) TDO Test Data Output (JTAG) Supplies power for output buffers Selects operation mode Note Note This device only supports Single Differential Clock, R/R Mode. (R/R stands for Registered Input/Registered Output.) Data Sheet M13508EJ2V0DS 3 µPD464318AL, 464336AL 119-pin plastic BGA (128K Words by 36 Bits Pin Assignment) [ µPD464336ALS1 ] Bottom View Top View A B C D E F G H J K L M N P R T U 1 2 3 4 5 6 7 7 6 5 4 3 2 1 4 7 6 5 4 3 2 1 1 2 3 4 5 6 7 VDDQ SA2 SA5 NC SA9 SA12 VDDQ A VDDQ SA12 SA9 NC SA5 SA2 VDDQ NC NC SA15 NC SA16 NC NC B NC NC SA16 NC SA15 NC NC NC SA3 SA6 VDD SA10 SA13 NC C NC SA13 SA10 VDD SA6 SA3 NC DQb8 DQb9 VSS ZQ VSS DQc9 DQc8 D DQc8 DQc9 VSS ZQ VSS DQb9 DQb8 DQb6 DQb7 VSS /SS VSS DQc7 DQc6 E DQc6 DQc7 VSS /SS VSS DQb7 DQb6 VDDQ DQb5 VSS /G VSS DQc5 VDDQ F VDDQ DQc5 VSS /G VSS DQb5 VDDQ DQb3 DQb4 /SBb NC /SBc DQc4 DQc3 G DQc3 DQc4 /SBc NC /SBb DQb4 DQb3 DQb1 DQb2 VSS NC VSS DQc2 DQc1 H DQc1 DQc2 VSS NC VSS DQb2 DQb1 VDDQ VDD VREF VDD VREF VDD VDDQ J VDDQ VDD VREF VDD VREF VDD VDDQ DQa1 DQa2 VSS K VSS DQd2 DQd1 K DQd1 DQd2 VSS K VSS DQa2 DQa1 DQa3 DQa4 /SBa /K /SBd DQd4 DQd3 L DQd3 DQd4 /SBd /K /SBa DQa4 DQa3 VDDQ DQa5 VSS /SW VSS DQd5 VDDQ M VDDQ DQd5 VSS /SW VSS DQa5 VDDQ DQa6 DQa7 VSS SA1 VSS DQd7 DQd6 N DQd6 DQd7 VSS SA1 VSS DQa7 DQa6 DQa8 DQa9 VSS SA0 VSS DQd9 DQd8 P DQd8 DQd9 VSS SA0 VSS DQa9 DQa8 NC SA4 M2 VDD M1 SA14 NC R NC SA14 M1 VDD M2 SA4 NC ZZ NC SA7 SA8 SA11 NC NC T NC NC SA11 SA8 SA7 NC ZZ VDDQ NC TDO TCK TDI TMS VDDQ U VDDQ TMS TDI TCK TDO NC VDDQ Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL Pin Name and Functions [µPD464336ALS1] Pin name Description Function VDD Core Power Supply Supplies power for RAM core VSS Ground VDDQ Output Power Supply VREF Input Reference K, /K Main Clock SA0 to SA16 Synchronous Address Input DQa1 to DQd9 Synchronous Data Input / Output /SS Synchronous Chip Select Logically selects SRAM /SW Synchronous Byte Write Enable Write command /SBa Synchronous Byte "a" Write Enable Write DQa1 to DQa9 /SBb Synchronous Byte "b" Write Enable Write DQb1 to DQb9 /SBc Synchronous Byte "c" Write Enable Write DQc1 to DQc9 /SBd Synchronous Byte "d" Write Enable Write DQd1 to DQd9 /G Asynchronous Output Enable Asynchronous input ZZ Asynchronous Sleep Mode Enables sleep mode, active high ZQ Output Impedance Control M1, M2 Mode Select NC No Connection TMS Test Mode Select (JTAG) TDI Test Data Input (JTAG) TCK Test Clock Input (JTAG) TDO Test Data Output (JTAG) Supplies power for output buffers Selects operation mode Note Note This device only supports Single Differential Clock, R/R Mode. (R/R stands for Registered Input/Registered Output.) Data Sheet M13508EJ2V0DS 5 µPD464318AL, 464336AL Late Write Block Diagram SA0 to SA17 K Address register K /K Mux Write address register /K /SS /SS Write clock genelator /SW /SW /SBa /SBa Write control logic /SBb /SBb /SBc /SBc /SBd /SBd DQ 6 /G ZZ ZZ Read comp. Data Data in out Mux Data in register /G Memory array Output Register Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL Programmable Impedance / Power Up Requirements An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V SS to allow for the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of 10 % is between 175 ohm and 350 ohm. Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in supply voltage and temperature. One evaluation occurs every 8 clock cycles and each evaluation may move the output driver impedance level only one step at a time towards the optimum level. The output driver has 64 discrete binary weighted steps. The impedance update of the output driver occurs when the SRAM is in Hi-Z. Write and Deselect operations will synchronously switch the SRAM into and out of Hi-Z, therefore, triggering an update. Power up requirements for the SRAM are that VDD must be powered before or simultaneously with VDDQ followed by VREF; inputs should be powered last. The limitation on VDDQ is that it must not exceed VDD by more than 0.4 V during power up. In order to guarantee the optimum internally regulated supply voltage, the SRAM requires 4 µs of power-up time after VDD reaches its operating range. To guarantee optimum output driver impedance after power up, the SRAM needs 520 clock cycles followed by a single Low-Z to Hi-Z transition at the end of 520 cycles. Data Sheet M13508EJ2V0DS 7 µPD464318AL, 464336AL Synchronous Truth Table DQa1–9 DQb1–9 DQc1–9 DQd1–9 Power ZZ /SS /SW /SBa /SBb /SBc /SBd Mode L H × × × × × Not selected Hi-Z Hi-Z Hi-Z Hi-Z Active L L H × × × × Read Dout Dout Dout Dout Active L L L L L L L Write Din Din Din Din Active L L L L H H H Write Din Hi-Z Hi-Z Hi-Z Active L L L H L L L Write Hi-Z Din Din Din Active H x x x x x x Sleep Mode Hi-Z Hi-Z Hi-Z Hi-Z Standby Remark × : Don’t care Output Enable Truth Table Mode /G DQ Read L Dout Read H Hi-Z Sleep (ZZ=H) x Hi-Z Write (/SW=L) x Hi-Z Deselect (/SS=H) x Hi-Z Mode Select (I/O) Note1 M1 M2 VSS VDD Mode Single Differential Clock (K,/K), R/R Mode Note2 Notes 1. This device only supports Single Differential Clock, R/R Mode. Mode Select Pins(M1,M2) are to be tied to either VDD or VSS 2. R/R : Registered Input / Registered Output Mode Select (Output Buffer) ZQ IZQ × RQ VDD Mode Controlled impedance push-pull output buffer mode 1 Push-Pull output buffer mode 2 Notes 1. See figure. ZQ RQ (175 Ω RQ 350 Ω) 2. See figure. VDD ZQ 8 Notes Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL Electrical Specifications Absolute Maximum Ratings Parameter Supply voltage Symbol Condition MIN. TYP. MAX. Unit Note VDD –0.5 +4 V 1 VDDQ –0.5 +4 V 1 Input voltage VIN –0.5 VDD + 0.3 V 1 Input / Output voltage VI/O –0.5 VDDQ + 0.3 V 1 Operating temperature Tj 5 110 °C 2 Tstg –55 +125 °C Output supply voltage Storage temperature Notes 1. –1.0 V MIN. (Pulse width 10% Tcyc) 2. Tj = Junction temperature Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (Tj = 5 to 110 °C) Parameter MIN. TYP. MAX. Unit VDD 3.15 3.3 3.45 V Output buffer supply voltage VDDQ 1.4 1.5 1.6 V Input reference voltage VREF 0.6 0.75 0.9 V Low level input voltage VIL –0.3 Note VREF–0.1 V High level input voltage VIH VREF+0.1 VDDQ+0.3 V MAX. Unit Core supply voltage Symbol Conditions Note –1.0 V MIN. (Pulse width 10% Tcyc) Recommended AC Operating Conditions (Tj = 5 to 110 °C) Parameter Symbol Conditions MIN. TYP. Input reference voltage VREF (RMS) –5% +5% V Low level input voltage VIL –0.3 VREF–0.2 V High level input voltage VIH VREF+0.2 VDDQ+0.3 V Capacitance (TA = 25 °C, f = 1 MHz) Parameter Note Symbol Test conditions MAX. Unit Input capacitance CIN VIN = 0 V 6 pF Input / Output capacitance CI/O VI/O = 0 V 7 pF Note These parameters are sampled and not 100% tested. Data Sheet M13508EJ2V0DS 9 µPD464318AL, 464336AL DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Symbol TYP. MAX. Unit ILI VIN = 0 to VDD –5 +5 µA DQ leakage current ILO VI/O = 0 to VDDQ, /SS = VIH or /G = VIH –5 +5 µA Operating supply current ICC VIN = VIH or VIL, /SS = VIL, ZZ = VIL, µPD464318AL 550 mA cycle = 250 MHz, IDQ = 0 mA µPD464336AL 750 ICC2 supply current Sleep mode power supply VIN = VIH or VIL, /SS = VIL, ZZ = VIL, 200 mA 55 mA mA cycle = 4 MHz, IDQ = 0 mA ISBZZ current • MIN. Input leakage current Quiescent active power • Conditions ZZ = VIH, All other inputs = VIH or VIL cycle = DC, IDQ = 0 mA Power supply standby current ISBSS • VIN = VIH or VIL, /SS = VIH, ZZ = VIL, µPD464318AL 530 cycle=250 MHz, IDQ = 0 mA µPD464336AL 730 Output Voltage on Controlled Impedance Push-Pull Output Buffer Mode (VZQ = IZQ × RQ) Parameter Low level output voltage Symbol VOL Conditions IOL = (VDDQ/2) / (RQ/5) ± 10% MIN. TYP. MAX. Unit VSS VDDQ/2 V VDDQ/2 VDDQ V MAX. Unit @VOL = VDDQ / 2 (175 Ω < RQ < 350 Ω) High level output voltage VOH IOH = (VDDQ/2) / (RQ/5) ± 10% @VOH = VDDQ / 2 (175 Ω < RQ < 350 Ω) Output Voltage on Push-Pull Output Buffer Mode (VZQ = VDD) Parameter Symbol Conditions MIN. TYP. Low level output voltage VOL IOL = +4 mA – 0.3 V High level output voltage VOH IOH = – 4 mA VDDQ–0.3 – V 10 Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Characteristics Test Conditions Input waveform (rise and fall time = 0.5 ns (20 to 80%)) 1.25 V VTT or VDDQ / 2 0.25 V Remarks 1. Clock input differential voltage 2. Clock input common mode voltage range Output waveform VTT or VDDQ / 2 Data Sheet M13508EJ2V0DS 11 µPD464318AL, 464336AL Single Differential Clock, Registered Input / Registered Output Mode Parameter Symbol –A4 (250 MHz) –A44 (225 MHz) –A5 (200 MHz) MIN. MAX. MIN. MAX. MIN. MAX. Unit Clock cycle time tKHKH 4.0 – 4.4 – 5.0 – ns Clock phase time 1.5 – 1.5 – 1.5 – ns 0.5 – 0.5 – 0.5 – ns 0.75 – 0.75 – 1.0 – ns 2.0 – 2.3 – 2.5 ns Setup times Hold times Address tKHKL / tKLKH tAVKH Write data tDVKH Write enable tWVKH Chip select tSVKH Address tKHAX Write data tKHDX Write enable tKHWX Chip select tKHSX Notes Clock access time tKHQV – K high to Q change tKHQX 0.7 – 0.7 – 0.7 – ns 2 /G low to Q valid tGLQV – 2.0 – 2.3 – 2.5 ns 1 /G low to Q change tGLQX 0.7 – 0.7 – 0.7 – ns 2 /G high to Q Hi-Z tGHQZ 1.0 2.0 1.0 2.3 1.0 2.5 ns 2 K high to Q Hi-Z (/SW) tKHQZ 1.0 2.5 1.0 2.8 1.0 3.0 ns 2 K high to Q Hi-Z (/SS) tKHQZ2 1.0 2.5 1.0 2.8 1.0 3.0 ns 2 K high to Q Lo-Z tKHQX2 0.7 – 0.7 – 0.7 – ns /G high Pulse width tGHGL 4.0 – 4.4 – 5.0 – ns 3 /G high to K high tGHKH 1.0 – 1.0 – 1.0 – ns 3 K high to /G low tKHGL 2.5 – 2.5 – 2.5 – ns 3 Sleep Mode Recovery tZZR 4.0 – 4.4 – 5.0 – ns 4 Sleep Mode Enable tZZE – 4.0 – 4.4 – 5.0 ns 4 Notes 1. See figure. (VTT=0.75 V, RQ=250 Ω) VTT 50 Ω Z0 = 50 Ω DQ (Output) 20 pF 2. See figure. (VTT=0.75 V, RQ=250 Ω) VTT 50 Ω DQ (Output) 5 pF 3. Controlled impedance push-pull output buffer mode only. 4. /SS must be ‘high’ before sleep mode entry. 12 Data Sheet M13508EJ2V0DS 1 Single Differential Clock, Registered Input / Registered Output Mode (Read Operation) /K K tKHAX tKHKH tKHKL tKLKH tAVKH Address a b c d e f g h Data Sheet M13508EJ2V0DS i j tKHQZ2 tKHQX2 k tKHSX tSVKH /SS tKHWX tWVKH /SW tGHGL /G DQ Qb Qa tKHQX tKHQV Qc tGLQV Qe Qf Qg Qi 13 µPD464318AL, 464336AL tGLQX tGHQZ 14 Single Differential Clock, Registered Input / Registered Output Mode (Write Operation) /K K tKHAX tKHKH tKHKL tKLKH tAVKH Address l m n o p q r s t u v tKHSX Data Sheet M13508EJ2V0DS tSVKH /SS tKHWX tWVKH /SW tGHKH tKHGL /G DQ tGLQV Dn Ql tKHQZ Qo tDVKH tKHDX Qp Qq tKHQX2 Ds Qt µPD464318AL, 464336AL tGLQX tGHQZ Sleep Mode /K K Address a b c d e f g h i j l k Data Sheet M13508EJ2V0DS /SS /ZZ tZZE DQ Qa Qb Qc tZZR Qj µPD464318AL, 464336AL 15 µPD464318AL, 464336AL JTAG Specifications The µPD464318AL and µPD464336AL support a limited set of JTAG functions as in IEEE standard 1149.1. Test Access Port (TAP) Pins Pin Name Pin Assignments Description TCK 4U Test Clock Input. All input are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS 2U Test Mode Select. This is the command input for the TAP controller state machine. TDI 3U Test Data Input. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is deter-mined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction. TDO 5U Test Data Output. Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high for five rising edges of TCK. The controller state is also reset on the SRAM POWER-UP. JTAG DC Characteristics (Tj = 5 to 110 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit JTAG input high voltage VIH 2.2 VDD+0.3 V JTAG input low voltage VIL –0.3 +0.8 V JTAG output high voltage VOH IOH = –8 mA 2.4 – V JTAG output low voltage VOL IOL = 8 mA – 0.4 V 16 Data Sheet M13508EJ2V0DS Notes µPD464318AL, 464336AL JTAG AC Test Conditions (Tj = 5 to 110 °C) Input waveform (rise / fall time = 1 ns (20 to 80 %)) 3.0 V 1.5 V Test Points 1.5 V 0V Output waveform 1.5 V Test Points 1.5 V Output load (VTT=1.5 V) VTT Z0 = 50 Ω 50 Ω TDO Data Sheet M13508EJ2V0DS 17 µPD464318AL, 464336AL JTAG AC Characteristics (Tj = 5 to 110 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Clock Cycle Time (TCK) tTHTH 100 – ns Clock Phase Time (TCK) tTHTL / tTLTH 40 – ns Setup Time (TMS / TDI) tMVTH / tDVTH 10 – ns Hold Time (TMS / TDI) tTHMX / tTHDX 10 – ns tTLQV – 20 ns TCK Low to TDO Valid (TDO) JTAG Timing Diagram tTHTH TCK tMVTH tTHTL tTLTH TMS tTHMX tDVTH TDI tTHDX TDO 18 Data Sheet M13508EJ2V0DS tTLQV Note µPD464318AL, 464336AL Scan Register Definition (1) Register name Instruction register Description The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run-test/idle or the various data register state. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state. Bypass register The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when the controller is put in capture-DR state with the IDCODE command loaded in the instruction register. The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR state. Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to activate the boundary register. The Scan Exit Order tables describe which device bump connects to each boundary register location. The first column defines the bit’s position in the boundary register. The shift register bit nearest TDO (i.e., first to be shifted out) is defined as bit 1. The second column is the name of the input or I/O at the bump and the third column is the bump number. Scan Register Definition (2) µPD464318AL µPD464336AL Unit Instruction register 3 3 bit Bypass register 1 1 bit ID register 32 32 bit Boundary register 51 70 bit Register name ID Register Definition Part number Organization ID [31:28] vendor revision no. ID [27:12] part no. ID [11:1] vendor ID no. ID [0] fix bit µPD464318AL 256K x 18 XXXX 0110001011 000000 00010010000 1 µPD464336AL 128K x 36 XXXX 0110101100 000000 00010010000 1 Data Sheet M13508EJ2V0DS 19 µPD464318AL, 464336AL SCAN Exit Order [ µPD464318AL (256K words by 18 bits) ] [ µPD464336AL (128K words by 36 bits) ] Bit no. Signal name Bump ID Bit no. Signal name Bump ID Bit no. Signal name Bump ID Bit no. Signal name Bump ID 1 M2 5R 26 SA17 3B 1 M2 5R 36 SA16 3B 2 SA5 6T 27 NC 2B 37 NC 2B 3 SA0 4P 28 SA9 3A 2 SA0 4P 38 SA9 3A 29 SA10 3C 3 SA8 4T 39 SA10 3C 4 SA4 6R 30 SA13 2C 4 SA4 6R 40 SA13 2C 5 SA8 5T 31 SA12 2A 5 SA7 5T 41 SA12 2A 6 ZZ 7T 6 ZZ 7T 42 DQc9 2D 7 DQa1 7P 8 DQa2 6N 32 DQb1 1D 7 DQa9 6P 43 DQc8 1D 33 DQb2 2E 8 DQa8 7P 44 DQc7 2E 9 DQa7 6N 45 DQc6 1E 10 DQa6 7N 46 DQc5 2F 11 DQa5 6M 47 DQc4 2G 12 DQa4 6L 48 DQc3 1G 13 DQa3 7L 49 DQc2 2H 34 9 DQa3 DQb3 2G 6L 35 DQb4 1H 14 DQa2 6K 50 DQc1 1H 10 DQa4 7K 36 /SBb 3G 15 DQa1 7K 51 /SBc 3G 11 /SBa 5L 37 ZQ 4D 16 /SBa 5L 52 ZQ 4D 12 /K 4L 38 /SS 4E 17 /K 4L 53 /SS 4E 13 K 4K 39 NC 4G 18 K 4K 54 NC 4G 14 /G 4F 40 NC 4H 19 /G 4F 55 NC 4H 41 /SW 4M 20 /SBb 5G 56 /SW 4M 21 DQb1 7H 57 /SBd 3L 22 DQb2 6H 58 DQd1 1K 15 DQa5 6H 16 DQa6 7G 17 DQa7 6F 18 DQa8 7E 42 DQb5 2K 23 DQb3 7G 59 DQd2 2K 43 DQb6 1L 24 DQb4 6G 60 DQd3 1L 25 DQb5 6F 61 DQd4 2L 44 DQb7 2M 26 DQb6 7E 62 DQd5 2M 45 DQb8 1N 27 DQb7 6E 63 DQd6 1N 28 DQb8 7D 64 DQd7 2N 29 DQb9 6D 65 DQd8 1P 19 DQa9 6D 20 SA2 6A 46 DQb9 2P 30 SA2 6A 66 DQd9 2P 21 SA3 6C 47 SA11 3T 31 SA3 6C 67 SA11 3T 22 SA7 5C 48 SA14 2R 32 SA6 5C 68 SA14 2R 23 SA6 5A 49 SA1 4N 33 SA5 5A 69 SA1 4N 24 NC 6B 50 SA15 2T 34 NC 6B 25 SA16 5B 51 M1 3R 35 SA15 5B 70 M1 3R 20 Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL JTAG Instructions Instructions Description EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register, whatever length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented in this device. Therefore this device is not 1149.1 compliant. Nevertheless, this RAMs TAP does respond to an all zeros instruction, as follows. With the EXTEST (000) instruction loaded in the instruction register the RAM responds just as it does in response to the SAMPLE instruction, except the RAM output are forced to Hi-Z any time the instruction is loaded. IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test-logic-reset state. BYPASS The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE Sample is a Standard 1149.1 mandatory public instruction. When the sample instruction is loaded in the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable input will not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state then places the boundary scan register between the TDI and TDO pins. This functionality is not Standard 1149.1 compliant. SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (Hi-Z) and the boundary register is connected between TDI and TDO when the TAP controller is moved to the shift-DR state. JTAG Instruction Cording IR2 IR1 IR0 Instruction Note 0 0 0 EXTEST 1 0 0 1 IDCODE 0 1 0 SAMPLE-Z 0 1 1 BYPASS 1 0 0 SAMPLE 1 0 1 BYPASS 1 1 0 BYPASS 1 1 1 BYPASS 1 Note 1. TRISTATE all data drivers and CAPTURE the pad values into a SERIAL SCAN LATCH. Data Sheet M13508EJ2V0DS 21 µPD464318AL, 464336AL TAP Controller State Diagram 1 Test-Logic-Reset 0 1 0 1 Run-Test / Idle 1 Select-DR-Scan Select-IR-Scan 0 0 1 1 Capture-DR Capture-IR 0 0 0 Shift-DR 0 Shift-IR 1 1 1 1 Exit1-DR Exit1-IR 0 0 0 Pause-DR 0 Pause-IR 1 1 0 0 Exit2-DR Exit2-IR 1 1 Update-DR 1 Update-IR 0 1 0 Disabling The Test Access Port It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be tied to VDD through a 1 k resistor. TDO should be left unconnected. 22 Data Sheet M13508EJ2V0DS Test Logic Operation (Instruction Scan) TCK TMS Run-Test/Idle Update-IR Exit1-IR Shift-IR Exit2-IR Pause-IR Exit1-IR Shift-IR Capture-IR select-IR-Scan select-DR-Scan Run-Test/Idle Test-Logic-Reset Data Sheet M13508EJ2V0DS Controller state TDI IDCODE Output from Instruction Register Output Inactive TDO New Instruction Output from Instruction Register 23 µPD464318AL, 464336AL Instruction Register state 24 Test Logic Operation (Data Scan) TCK TMS Test-Logic-Reset Select-IR-Scan Select-DR-Scan Run-Test/Idle Update-DR Exit1-DR Shift-DR µPD464318AL, 464336AL Output from Instruction Register Output from Instruction Register Exit2-DR Pause-DR Exit1-DR Shift-DR Output Inactive IDCODE Instruction Instruction Register state Capture-DR select-DR-Scan TDO Run-Test/Idle Data Sheet M13508EJ2V0DS Controller state TDI µPD464318AL, 464336AL Package Drawing 119 PIN PLASTIC BGA A S B T C 7 6 5 4 3 2 1 D U T R P NM L K J H G F E D C B A P J I R H K F E G L ITEM A B MILLIMETERS 22.0±0.2 19.5 INCHES 0.866±0.008 0.768 C 12.0 0.472 D E 14.0±0.2 0.84 0.551±0.008 0.033 F 1.27 (T.P.) 0.05 (T.P.) G 0.6±0.1 0.024 +0.004 –0.005 H 0.56 0.022 I 1.46±0.1 0.057 +0.005 –0.004 J 2.30 MAX. 0.091 K 0.15 0.006 L 0.78±0.1 0.031 +0.004 –0.005 P C0.7 C0.028 R S 25° 1.25 25° 0.049 T 1.0 0.039 P119S1-R4 Data Sheet M13508EJ2V0DS 25 µPD464318AL, 464336AL Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the µPD464318AL and µPD464336AL. Type of Surface Mount Device µPD464318ALS1: 119-pin plastic BGA µPD464336ALS1: 119-pin plastic BGA 26 Data Sheet M13508EJ2V0DS µPD464318AL, 464336AL NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Data Sheet M13508EJ2V0DS 27 µPD464318AL, 464336AL • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4