Alcatel 1945 LMM 10 Gb/s EA-ILM laser module With integrated wavelength monitoring Description The Alcatel 1945 LMM contains a state-of-the-art high performance DFB laser chip integrated with an electro-absorption modulator (EA-ILM) and is designed for 10Gb/s long haul DWDM digital transmission systems on (up to 90km distance on SMF). This module is designed for DWDM applications with a spacing between the channels down to 50 GHz without using external locker. The module integrates a wavelength monitoring function in order to allow wavelength stabilization over product lifetime. Despite of this new feature, the package and the pinout of the new product stays compatible with the previous series , Alcatel 1915 LMM, without the integrated wavelength monitoring function, in order to avoid a complete redesign of existing boards. The choice of an analog output for the control signal will leave the freedom for the user to lock the wavelength either with a digital or an analog circuit. The module incorporates also a thermoelectric cooler, precision thermistor, and optical isolator for stable operation under all conditions. Features • • • • • • • • Integrated Fabry-Perot Etalon wavelength monitoring (replaces external lockers) 50 GHz spacing ITU-T channels InGaAsP monolithically Integrated DFB Laser and Modulator chip (EA-ILM) Low drive voltage (≤ 2VPP) Very low power penalty over 90 Km of standard fiber for 10Gb/s operation Internal optical isolator Internal TEC and power monitoring photodiode High frequency industry-standard 7-pin butterfly package with 50Ω RF input and either K or GPO RF connector. Applications STM-64 and OC-192 Long Reach DWDM transmission system • Terminals for submarine DWDM transmission systems • Electro-Optic Characteristics Parameter Laser Threshold current (BOL) Operating current (BOL) Laser forward voltage Optical output power Laser chip temperature range for Wavelength tunability Side mode suppression ratio Dispersion penalty Dynamic extinction ratio Modulator bias voltage Modulator drive voltage Cut-off frequency RF return loss Rise time / Fall time Thermistor resistance TEC current (EOL) Symb. Conditions Min Max Units ITH IOP VF PAVE Tλ CW, VBias = 0V CW, VBias = 0V CW, IOP, VBias = 0V IOP, Vmod, (1) See (3) 5 60 35 80 2 mA mA V dBm °C SMSR DS DER VBias VMOD S21 S11 tr/tf RTH It TEC voltage (EOL) Vt Tracking error TR -5 15 30 35 See (1), (2) See note 1 See (1) See (1) @-3 dB, VBias = -1V, 50Ω VBias= -1V, DC to 7GHz (1), (2), 10%,90% TS = 25°C IOP=100mA, ∆T=45°C, TC=65°C, VBias= -1V IOP=100mA, ∆T=45°C, TC=65°C, VBias= -1V Ts=25°C, Tc=65°C, IOP=100mA, TR=10log[P(65°C)/P(25°C)] 45 10.5 1.3 dB dB dB V V GHz dB ps kΩ A 2.5 V +0.5 dB 2 10 -2 0 2 10 10 9.5 -0.5 Notes: All limits start of life, Tcase=25°C, Tsubmount=15 to 30°C, Vr=-5V, unless otherwise stated. (1) BER = 10-10; 9.953 Gbit/s modulation; 223 - 1 PRBS; NRZ line code; DER≥10 dB, PAVE (2) 1600 ps/nm dispersion assuming fiber with an average dispersion of 18 ps/nm/km Optical power in the fiber shall not exceed the linear transmission regime. (3) Tchip = Tλ .Tλ is chip temperature required to meet target wavelength Wavelength monitoring section Two photodiodes are used to ensure both optical power monitoring and wavelength monitoring. The first one (power monitoring) is referenced as monitoring photodiode (PDmon) whereas the second one (wavelength monitoring) is referenced as filter photodiode (PDfilt). Power Monitoring Photodiode current Filter Monitoring Photodiode Photodiodes dark current Center wavelength Wavelength stability over lifetime Wavelength capture range Filter slope (normalized to maximum PDfilt current) Electrical responsivity ratio between power monitoring channel and filter monitoring channel Symb. Min IPDmon IPDfilt Idark λc ∆λc CR FS ERT 20 20 -2.5 90 2 Max 0.1 ITU grid +2.5 10 ±6 Unit µA µA µA GHZ GHz nm-1 dB Absolute maximum ratings Exposing the device to stresses above those listed in absolute maximum rating could cause permanent damage. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Environmental Parameter Min Max Unit Storage temperature Operating temperature Lead soldering time (260°C) Axial force on fiber ( 10 seconds max.) Fiber bend radius TEC voltage TEC current ESD (1) applied on Laser ESD (1) on Modulator -40 0 70 65 10 5 2.8 1.4 2000 500 °C °C s N mm V A V V Max Unit 150 2 1 5 20 1 mA V V V V mA 30 (1) Human body model Electro-optic Parameter Laser forward current Laser reverse voltage Modulator forward voltage Modulator reverse voltage Photodiode reverse Voltage Photodiode forward Current Mechanical details (in mm) Min Pin allocation Pin 1 2 3 4 5 6 7 8 Case ground June 2001 Copyright © 2000 Alcatel Optronics Description λ Monitoring PD anode (-) Thermistor Laser DC Bias (+) Power Monitoring PD Anode (-) Common Power Monitoring and λ Monitoring PD Cathode (+) TE Cooler (+) TE Cooler (-) EA modulator cathode Modulator anode/thermistor Customized versions are available for large quantities. Performance figures contained in this document must be specifically confirmed in writing by Alcatel Optronics before they become applicable to any particular order or contract. Alcatel Optronics reserves the right to make changes to the products or information contained herein without notice. A printed version of this document is an uncontrolled copy. Standards ITU-T G.652 optical fiber IEC 68-2 and MIL STD 883 environment LASER RADIATION AVOID EXPOSURE TO BEAM Class 3 B laser product ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES EUROPE Route de Villejust F-91625 NOZAY CEDEX Tel : (+33) 1 64 49 49 10 Fax : (+33) 1 64 49 49 61 USA 15036 Conference Center Drive CHANTILLY - VA 20151 Tel : (+1) 703 679 3600 Fax : (+1) 703 679 6667 CANADA 45, De Villebois, suite 200 Gatineau (PQ) Canada, J8T 8J7 Tel : (+1) 819 243 3755 Fax : (+1) 819 243 3354 JAPAN Yebisu Garden Place Tower PO Box 5024 20-3, Ebisu 4 - Chome Shibuya - ku TOKYO 150 - 6028 Tel : (+81) 3 5424 85 65 Fax : (+81) 3 5424 85 81