ETC DS0026CMM

DS0026
Dual High-Speed MOS Driver
General Description
Features
DS0026 is a low cost monolithic high speed two phase MOS
clock driver and interface circuit. Unique circuit design provides both very high speed operation and the ability to drive
large capacitive loads. The device accepts standard TTL
outputs and converts them to MOS logic levels. The device
may be driven from standard 54/74 series and 54S/74S
series gates and flip-flops or from drivers such as the
DS8830 or DM7440. The DS0026 is intended for applications in which the output pulse width is logically controlled;
i.e., the output pulse width is equal to the input pulse width.
The DS0026 is designed to fulfill a wide variety of MOS
interface requirements. Information on the correct usage of
the DS0026 in these as well as other systems is included in
the application note AN-76.
n
n
n
n
n
Fast rise and fall times — 20 ns 1000 pF load
High output swing — 20V
High output current drive — ± 1.5 amps
TTL compatible inputs
High rep rate — 5 to 10 MHz depending on power
dissipation
n Low power consumption in MOS “0” state — 2 mW
n Drives to 0.4V of GND for RAM address drive
Connection Diagram (Top View)
Dual-In-Line Package
00585302
© 2002 National Semiconductor Corporation
DS005853
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DS0026 Dual High-Speed MOS Driver
February 2002
DS0026
Absolute Maximum Ratings
Operating Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
(V+) − (V−) Differential Voltage
(V+) − (V−) Differential Voltage
22V
Input Current
5.5V
Peak Output Current
1.5A
Storage Temperature Range
107˚C/W
N08E θJC
37˚C/W
M08A θJA
180˚C/W
MUA08A θJA
−65˚C to +150˚C
Lead Temperature
(Soldering, 10 sec.)
1168mW
N08E θJA
100 mA
Input Voltage (VIN) − (V−)
10V to 20V
Maximum Power Dissipation at TA
= 25˚C (Note 7)
220˚C/W
Operating Temperature Range, TA
0˚C to +70˚C
300˚C
Ordering Information
Order Number
Package Type
DS0026CN
M-DIP
NS Package Number
N08E
DS0026CMA
SOIC
M08A
DS0026CMM
MSOP
MUA08A
Conditions
Min
Typ
2
1.5
Electrical Characteristics (Notes 2, 3, 4)
Symbol
Parameter
Max
Units
15
mA
VIH
Logic “1” Input Voltage
V− = 0V
IIH
Logic “1” Input Current
VIN − V− = 2.4V
10
VIL
Logic “0” Input Voltage
V− = 0V
0.6
0.4
V
IIL
Logic “0” Input Current
VIN − V− = 0V
−3
−10
µA
VOL
Logic “1” Output Voltage
VIN − V− = 2.4V, IOL = 1 mA
V−+0.7
V−+1.0
V
VOH
Logic “0” Output Voltage
VIN − V− = 0.4V, VSS ≥ V+ + 1.0V
IOH = − 1 mA
ICC(ON)
“ON” Supply Current
(one side on)
V+ − V− = 20V, VIN − V− = 2.4V
ICC(OFF)
“OFF” Supply Current
V+ − V− = 20V,
VIN − V− = 0V
V+ − 1.0
V
V+−0.8
V
30
40
mA
10
100
µA
Switching Characteristics
(TA = 25˚C) (Notes 5, 6)
Symbol
Parameter
tON
Turn-On Delay
tOFF
Turn-Off Delay
tr
Rise Time
tf
Fall Time
Conditions
(Figure 1)
Min
Typ
Max
Units
5
7.5
12
ns
(Figure 2)
11
(Figure 1)
12
(Figure 2)
13
ns
15
ns
ns
(Figure 1),
(Note 5)
CL = 500 pF
15
18
ns
CL = 1000 pF
20
35
ns
(Figure 2),
(Note 5)
CL = 500 pF
30
40
ns
CL = 1000 pF
36
50
ns
(Figure 1),
(Note 5)
CL = 500 pF
12
16
ns
CL = 1000 pF
17
25
ns
(Figure 2),
(Note 5)
CL = 500 pF
28
35
ns
CL = 1000 pF
31
40
ns
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range”
they are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics provides conditions for actual device operation.
Note 2: These specifications apply for V+ − V− = 10V to 20V, CL = 1000 pF, over the temperature range of 0˚C to +70˚C for the DS0026CN.
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
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2
DS0026
Switching Characteristics
(Continued)
Note 4: All typical values for TA = 25˚C.
Note 5: Rise and fall time are given for MOS logic levels; i.e., rise time is transition from logic “0” to logic “1” which is voltage fall.
Note 6: The high current transient (as high as 1.5A) through the resistance of the internal interconnecting V− lead during the output transition from the high state
to the low state can appear as negative feedback to the input. If the external interconnecting lead from the driving circuit to V− is electrically long, or has significant
dc resistance, it can subtract from the switching response.
Note 7: Derate N08E package 9.3 mW/˚C for TA above 25˚C.
Typical VBB Connection
00585308
Typical Performance Characteristics
Input Current vs Input Voltage
Supply Current vs Temperature
Turn-On and Turn-Off Delay
vs Temperature
00585323
00585322
00585324
Rise Time vs Load
Capacitance
Fall Time vs Load
Capacitance
00585326
00585325
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DS0026
Typical Performance Characteristics
(Continued)
Recommended Input Coding
Capacitance
DC Power (PDC) vs
Duty Cycle
00585328
00585327
Schematic Diagram
1/2 DS0026
00585310
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DS0026
AC Test Circuits and Switching Time Waveforms
00585313
00585312
FIGURE 1.
00585315
00585314
FIGURE 2.
Typical Applications
AC Coupled MOS Clock Driver
00585317
Application Hints
00585316
DC Coupled RAM Memory Address or Precharge
Driver (Positive Supply Only)
DRIVING THE MM5262 WITH THE
DS0026 CLOCK DRIVER
The clock signals for the MM5262 have three requirements
which have the potential of generating problems for the user.
These requirements, high speed, large voltage swing and
large capacitive loads, combine to provide ample opportunity
for inductive ringing on clock lines, coupling clock signals to
other clocks and/or inputs and outputs and generating noise
on the power supplies. All of these problems have the potential of causing the memory system to malfunction. Recognizing the source and potential of these problems early in
the design of a memory system is the most critical step. The
object here is to point out the source of these problems and
give a quantitative feel for their magnitude.
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DS0026
Application Hints
are more expensive than two sided boards. The user must
make the decision as to the necessity of multilayer boards.
Suffice it to say here, that reliable memory boards can be
designed using two sided printed circuit boards.
(Continued)
Line ringing comes from the fact that at a high enough
frequency any line must be considered as a transmission
line with distributed inductance and capacitance. To see how
much ringing can be tolerated we must examine the clock
voltage specification. Figure 3 shows the clock specification,
in diagram form, with idealized ringing sketched in. The
ringing of the clock about the VSS level is particularly critical.
If the VSS − 1 VOH is not maintained, at all times, the
information stored in the memory could be altered. Referring
to Figure 1, if the threshold voltage of a transistor were
−1.3V, the clock going to VSS − 1 would mean that all the
devices, whose gates are tied to that clock, would be only
300 mV from turning on. The internal circuitry needs this
noise margin and from the functional description of the RAM
it is easy to see that turning a clock on at the wrong time can
have disastrous results.
00585318
FIGURE 3. Clock Waveform
Controlling the clock ringing is particularly difficult because of
the relative magnitude of the allowable ringing, compared to
magnitude of the transition. In this case it is 1V out of 20V or
only 5%. Ringing can be controlled by damping the clock
driver and minimizing the line inductance.
Damping the clock driver by placing a resistance in series
with its output is effective, but there is a limit since it also
slows down the rise and fall time of the clock signal. Because
the typical clock driver can be much faster than the worst
case driver, the damping resistor serves the useful function
of limiting the minimum rise and fall time. This is very important because the faster the rise and fall times, the worse the
ringing problem becomes. The size of the damping resistor
varies because it is dependent on the details of the actual
application. It must be determined empirically. In practice a
resistance of 10Ω to 20Ω is usually optimum.
Limiting the inductance of the clock lines can be accomplished by minimizing their length and by laying out the lines
such that the return current is closely coupled to the clock
lines. When minimizing the length of clock lines it is important to minimize the distance from the clock driver output to
the furthest point being driven. Because of this, memory
boards are usually designed with clock drivers in the center
of the memory array, rather than on one side, reducing the
maximum distance by a factor of 2.
Using multilayer printed circuit boards with clock lines sandwiched between the VDD and VSS power plains minimizes
the inductance of the clock lines. It also serves the function
of preventing the clocks from coupling noise into input and
output lines. Unfortunately multilayer printed circuit boards
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00585319
FIGURE 4. Clock Waveforms (Voltage and Current)
Because of the amount of current that the clock driver must
supply to its capacitive load, the distribution of power to the
clock driver must be considered. Figure 4 gives the idealized
voltage and current waveforms for a clock driver driving a
1000 pF capacitor with 20 ns rise and fall time.
As can be seen the current is significant. This current flows
in the VDD and VSS power lines. Any significant inductance in
the lines will produce large voltage transients on the power
supplies. A bypass capacitor, as close as possible to the
clock driver, is helpful in minimizing this problem. This bypass is most effective when connected between the VSS and
VDD supplies. The size of the bypass capacitor depends on
the amount of capacitance being driven. Using a low inductance capacitor, such as a ceramic or silver mica, is most
effective. Another helpful technique is to run the VDD and
VSS lines, to the clock driver, adjacent to each other. This
tends to reduce the lines inductance and therefore the magnitude of the voltage transients.
While discussing the clock driver, it should be pointed out
that the DS0026 is a relatively low input impedance device.
It is possible to couple current noise into the input without
seeing a significant voltage. Since the noise is difficult to
detect with an oscilloscope it is often overlooked.
6
This has been a hypothetical example to emphasize that
with 20V low rise/fall time transitions, parasitic elements can
not be neglected. In this example, 1 pF of parasitic capacitance could cause system malfunction, because a 7404
without a pull up resistor has typically only 0.3V of noise
margin in the “1” state at 25˚C. Of course it is stretching
things to assume that the inductance, L, completely isolates
the clock transient from the 7404. However, it does point out
the need to minimize inductance in input/output as well as
clock lines.
The output is current, so it is more meaningful to examine
the current that is coupled through a 1 pF parasitic capacitance. The current would be:
(Continued)
Lastly, the clock lines must be considered as noise generators. Figure 5 shows a clock coupled through a parasitic
coupling capacitor, CC, to eight data input lines being driven
by a 7404. A parasitic lumped line inductance, L, is also
shown. Let us assume, for the sake of argument, that CC is
1 pF and that the rise time of the clock is high enough to
completely isolate the clock transient from the 7404 because
of the inductance, L.
This exceeds the total output current swing so it is obviously
significant.
Clock coupling to inputs and outputs can be minimized by
using multilayer printed circuit boards, as mentioned previously, physically isolating clock lines and/or running clock
lines at right angles to input/output lines. All of these techniques tend to minimize parasitic coupling capacitance from
the clocks to the signals in question.
In considering clock coupling it is also important to have a
detailed knowledge of the functional characteristics of the
device being used. As an example, for the MM5262, coupling noise from the φ2 clock to the address lines is of no
particular consequence. On the other hand the address
inputs will be sensitive to noise coupled from φ1 clock.
00585320
FIGURE 5. Clock Coupling
With a clock transition of 20V the magnitude of the voltage
generated across CL is:
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DS0026
Application Hints
DS0026
Physical Dimensions
inches (millimeters) unless otherwise noted
Molded Dual-In-Line Package (N)
Order Number DS0026CN
NS Package Number N08E
8-Lead Small Outline Molded package (M)
NS Package Number M08A
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8
DS0026 Dual High-Speed MOS Driver
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
8-Lead Mini SOIC Package (MM)
NS Package Number MU08A
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