DS75365 Quad TTL-to-MOS Driver Y General Description Y The DS75365 is a quad monolithic integrated TTL-to-MOS driver and interface circuit that accepts standard TTL input signals and provides high-current and high-voltage output levels suitable for driving MOS circuits. It is used to drive address, control, and timing inputs for several types of MOS RAMs including the 1103. The DS75365 operates from the TTL 5V supply and the MOS VSS and VBB supplies in many applications. This device has been optimized for operation with VCC2 supply voltage from 16V to 20V, and with nominal VCC3 supply voltage from 3V to 4V higher than VCC2. However, it is designed so as to be usable over a much wider range of VCC2 and VCC3. In some applications the VCC3 power supply can be eliminated by connecting the VCC3 to the VCC2 pin. Y Y Y Y Y Y Y Y Y Y Capable of driving high-capacitance loads Compatible with many popular MOS RAMs Interchangeable with Intel 3207 VCC2 supply voltage variable over side range to 24V maximum VCC3 supply voltage pin available VCC3 pin can be connected to VCC2 pin in some applications TTL compatible diode-clamped inputs Operates from standard bipolar and MOS supply voltages Two common enable inputs per gate-pair High-speed switching Transient overdrive minimizes power dissipation Low standby power dissipation Features Y Y Quad positive-logic NAND TTL-to-MOS driver Versatile interface circuit for use between TTL and high-current, high-voltage systems Schematic and Connection Diagrams Dual-In-Line Package TL/F/7560 – 2 Top View Positive Logic: Y e A # E1 # E2 Order Number DS75365N or DS75365WM See NS Package Number M16B or N16A TL/F/7560 – 1 C1995 National Semiconductor Corporation TL/F/7560 RRD-B30M105/Printed in U. S. A. DS75365 Quad TTL-to-MOS Driver June 1992 Absolute Maximum Ratings (Note 1) Operating Conditions If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage Range of VCC1 Supply Voltage Range of VCC2 Supply Voltage Range of VCC3 nput Voltage Inter-Input Voltage (Note 4) Storage Temperature Range Maximum Power Dissipation* at 25§ C Cavity Package Molded Package SO Package Lead Temperature (Soldering, 10 sec) Supply Voltage (VCC1) Supply Voltage (VCC2) Supply Voltage (VCC3) Voltage Difference Between Supply Voltages: VCC3 –VCC2 Operating Ambient Temperature Range (TA) b 0.5V to 7V b 0.5V to 25V b 0.5V to 30V 5.5V 5.5V b 65§ C to a 150§ C Min 4.75 4.75 VCC2 0 Max 5.25 24 28 10 Units V V V V 0 70 §C 1509 mW 1476 mW 1488 mW 300§ C * Derate cavity package 10.1 mW/§ C above 25§ C; derate molded package 11.8 mW/§ C above 25§ C, derate SO package 11.9 mW/§ C above 25§ C. Electrical Characteristics (Notes 2 and 3) Symbol Parameter Conditions Min Typ Max Units 0.8 V b 1.5 V VIH High-Level Input Voltage VIL Low-Level Input Voltage VI Input Clamp Voltage VOH High-Level Output Voltage VCC3 e VCC2 a 3V, VIL e 0.8V, IOH e b 100 mA VCC2 b 0.3 VCC2 b 0.1 V VCC3 e VCC2 a 3V, VIL e 0.8V, IOH e b 10 mA VCC2 b 1.2 VCC2 b 0.9 V VCC3 e VCC2, VIL e 0.8V, IOH e b 50 mA VCC2 b 1 VCC2 b 0.7 V VCC3 e VCC2, VIL e 0.8V, IOH e b 10 mA VCC2 b 2.3 VCC2 b 1.8 VOL 2 V II e b12 mA Low-Level Output Voltage VIH e 2V, IOL e 10 mA 0.3 V 0.25 0.5 V VCC2 a 1.5 V 1 mA A Inputs 40 mA E1 and E2 Inputs 80 mA VCC3 e 15V to 28V, VIH e 2V, IOL e 40 mA VO Output Clamp Voltage II Input Current at Maximum VI e 5.5V VI e 0V, IOH e 20 mA Input Voltage IIH IIL High-Level Input Current Low-Level Input Current VI e 2.4V VI e 0.4V V 0.15 A Inputs b1 b 1.6 mA E1 and E2 Inputs b2 b 3.2 mA 4 8 mA b 2.2 a 0.25 mA b 2.2 b 3.2 mA 2.2 3.5 mA 31 47 mA 3 mA 25 mA ICC2(H) Supply Current from VCC2, VCC1 e 5.25V, VCC2 e 24V All Outputs High VCC3 e 24V, All Inputs at 0V, No Load 0.25 mA ICC3(H) Supply Current from VCC3, All Outputs High 0.5 mA ICC1(H) Supply Current from VCC1, VCC1 e 5.25V, VCC2 e 24V All Outputs High VCC3 e 28V, All Inputs at 0V, No Load ICC2(H) Supply Current from VCC2, All Outputs High ICC3(H) Supply Current from VCC3, All Outputs High ICC1(L) Supply Current from VCC1, VCC1 e 5.25V, VCC2 e 24V All Outputs Low VCC3 e 28V, All Inputs at 5V, No Load ICC2(L) Supply Current from VCC2, All Outputs Low ICC3(L) Supply Current from VCC3, All Outputs Low 16 2 Electrical Characteristics (Notes 2, 3) (Continued) Symbol Parameter ICC2(S) Supply Current from VCC2, Stand-By Condition Conditions ICC3(S) Supply Current from VCC3, Stand-By Condition Min Typ VCC1 e 0V, VCC2 e 24V VCC3 e 24V, All Inputs at 5V, No Load Max Units 0.25 mA 0.5 mA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Unless otherwise specified, min/max limits apply across the 0§ C to a 70§ C range for the DS75365. All typical values are for TA e 25§ C and VCC1 e 5V and VCC2 e 20V and VCC3 e 24V. Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown as max or min on absolute value basis. Note 4: This rating applies between any two inputs of any one of the gates. Switching Characteristics VCC1 e 5V, VCC2 e 20V, VCC3 e 24V, TA e 25§ C Symbol Parameter Conditions tDLH Delay Time, Low-to-High Level Output tDHL Delay Time, High-to-Low Level Output tTLH Min CL e 200 pF RD e 24X Typ Max Units 11 20 ns 10 18 ns Transition Time, Low-to-High Level Output 20 33 ns tTHL Transition Time, High-to-Low Level Output 20 33 ns tPLH Propagation Delay Time, Low-to-High Level Output 10 31 48 ns tPHL Propagation Delay Time, High-to-Low Level Output 10 30 46 ns (Figure 1 ) AC Test Circuit and Switching Time Waveforms TL/F/7560 – 3 TL/F/7560 – 4 Note 1: The pulse generator has the following characteristics: PRR e 1 MHz, ZOUT e 58X. Note 2: CL includes probe and jig capacitance. FIGURE 1. Switching Times, Each Driver 3 Typical Performance Characteristics High-Level Output Voltage vs Output Current High-Level Output Voltage vs Output Current Low-Level Output Voltage Output Current TL/F/7560 – 5 Voltage Transfer Characteristics Total Dissipation (All Four Drivers) vs Frequency Propagation Delay Time, Low-to-High Level Output vs Ambient Temperature Propagation Delay Time, High-to-Low Level Output vs Ambient Temperature Propagation Delay Time, Low-to-High Level Output vs VCC2 Supply Voltage Propagation Delay Time, High-to-Low Level Output vs VCC2 Supply Voltage Propagation Delay Time, Low-to-High Level Output vs Load Capacitance Propagation Delay Time, High-to-Low Level Output vs Load Capacitance TL/F/7560 – 6 4 TL/F/7560 – 7 FIGURE 2. Interconnection of DS75365 Devices with 1103-Type Silicon-Gate MOS RAM The power components per driver channel are: Typical Applications PLtL a PHtH T PC(AV) j C VC2f PLHtLH a PHLtHL PS(AV) e T where the times are as defined in Figure 4 . PL, PH, PLH, and PHL are the respective instantaneous levels of power dissipation and C is load capacitance. The DS75365 is so designed that PS is a negligible portion of PT in most applications. Except at very high frequencies, tL a tH n tLH a tHL so that PS can be neglected. The total dissipation curve for no load demonstrates this point. The power dissipation contributions from all four channels are then added together to obtain total device power. The following example illustrates this power calculation technique. Assume all four channels are operating identically with C e 100 pF, f e 2 MHz, VCC1 e 5V, VCC2 e 20V, VCC3 e 24V and duty cycle e 60% outputs high (tH/T e 0.6). Also, assume VOH e 20V, VOL e 0.1V, PS is negligible, and that the current from VCC2 is negligible when the output is low. On a per-channel basis using data sheet values: PDC(AV) e The fast switching speeds of this device may produce undesirable output transient overshoot because of load or wiring inductance. A small series damping resistor may be used to reduce or eliminate this output transient overshoot. The optimum value of the damping resistor depends on the specific load characteristics and switching speed. A typical value would be between 10X and 30X (Figure 3 ). Note: RD j 10X to 30X (Optional) TL/F/7560 – 8 FIGURE 3. Use of Damping Resistor to Reduce or Eliminate Output Transient Overshoot in Certain DS75365 Applications Thermal Information POWER DISSIPATION PRECAUTIONS Significant power may be dissipated in the DS75365 driver when charging and discharging high-capacitance loads over a wide voltage range at high frequencies. The total dissipation curve shows the power dissipated in a typical DS75365 as a function of load capacitance and frequency. Average power dissipation by this driver can be broken into three components: PT(AV) e PDC(AV) a PC(AV) a PS(AV) Ð # 4 J (20V) # 4 J (24V) 2.2 mA 31 mA # 4 J ( (0.6) Ð (5V) # 4 J 0 mA 16 mA (20V) # 4 J (24V) # 4 J ( (0.4) PDC(AV) e (5V) 4 mA b 2.2 mA a a a a a PDC(AV) e 58 mW per channel PC(AV) j (100 pF) (19.9V)2 (2 MHz) PC(AV) j 79 mW per channel. where PDC(AV) is the steady-state power dissipation with the output high or low, PC(AV) is the power level during charging or discharging of the load capacitance, and PS(AV) is the power dissipation during switching between the low and high levels. None of these include energy transferred to the load and all are averaged over a full cycle. For the total device dissipation of the four channels: PT(AV) j 4 (58 a 79) PT(AV) j 548 mW typical for total package. TL/F/7560 – 9 FIGURE 4. Output Voltage Waveform 5 6 Physical Dimensions inches (millimeter) Molded Dual-In-Line Package (M) Order Number DS75365WM NS Package Number M16B 7 DS75365 Quad TTL-to-MOS Driver Physical Dimensions inches (millimeter) (Continued) Molded Dual-In-Line Package (N) Order Number DS75365N NS Package Number N16A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 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