GS8550xU Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Planar Transistors for amplifier applications. Especially suitable for low power output stages such as portable radios in class-B push-pull operation. • Complementary to GS8050xU • The “x” in the part number can be B, C or D, depending on the current gain. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K per box E7/4K per Ammo mag., 20K per box Bottom View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO –40 V Collector-Emitter Voltage VCEO –25 V Emitter-Base Voltage VEBO –6 V IC –800 mA (1) mW (1) °C/W Collector Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RθJA 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS –55 to +150 °C Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case Document Number 88194 10-May-02 www.vishay.com 1 GS8550xU Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol J DC Current Gain Current Gain Group B C D Test Condition Min Typ Max VCE = –1V, IC = –5mA 45 135 — VCE = –1V, IC = –100mA 85 120 160 — — — 160 200 300 VCE = –1V, IC = –800mA — 30 — hFE Unit — Collector-Emitter Breakdown Voltage V(BR)CEO IC = –2mA, IB = 0 –25 — — V Collector-Base Breakdown Voltage V(BR)CBO IC = –100µA, IE = 0 –40 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = –100µA, IC = 0 –6 — — V Collector Cut-off Current ICBO VCB = –35V, IE = 0 — — –100 nA Emitter Cut-off Current IEBO VEB = –6V, IC = 0 — — –100 nA Collector-Emitter Saturation Voltage VCE(sat) IC = –800mA, IB = –80mA — –0.51 — V Base-Emitter Saturation Voltage VBE(sat) IC = –800mA, IB = –80mA — –1.25 — V Base-Emitter ON Voltage VBE(on) VCE = –1V, IC = –10mA — –0.66 –1.0 V COB VCB = –10V, IE = 0 ƒ = 1 MHz — 15 — pF ƒT VCE = –10V, IC = –50mA — 100 — MHz Output Capacitance Gain-Bandwidth Product www.vishay.com 2 Document Number 88194 10-May-02