BC327, BC328 Small Signal Transistors (PNP) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. ♦ These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. max. ∅ .022 (0.55) ♦ On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC327 BC328 –VCES –VCES 50 30 V V Collector-Emitter Voltage BC327 BC328 –VCEO –VCEO 45 25 V V Emitter-Base Voltage –VEBO 5 V Collector Current –IC 800 mA Peak Collector Current –ICM 1 A Base Current –IB 100 mA Power Dissipation at Tamb = 25 °C Ptot 6251) mW Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C 1) 4/98 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. BC327, BC328 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hFE hFE hFE 100 160 250 160 250 400 250 400 630 – – – hFE hFE hFE 60 100 170 130 200 320 – – – – – – Thermal Resistance Junction to Ambient Air RthJA – – 2001) K/W Collector-Emitter Cutoff Current at –VCE = 45 V at –VCE = 25 V at –VCE = 45 V, Tamb = 125 °C at –VCE = 25 V, Tamb = 125 °C BC327 BC328 BC327 BC328 –ICES –ICES –ICES –ICES – – – – 2 2 – – 100 100 10 10 nA nA µA µA BC327 BC328 – V(BR)CEO – V(BR)CEO 45 25 – – – – V V BC327 BC328 – V(BR)CES – V(BR)CES 50 30 – – – – V V Emitter-Base Breakdown Voltage at –IE = 0.1 mA – V(BR)EBO 5 – – V Collector Saturation Voltage at –IC = 500 mA, –IB = 50 mA –VCEsat – – 0.7 V Base-Emitter Voltage at –VCE = 1 V, –IC = 300 mA –VBE – – 1.2 V Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 50 MHz fT – 100 – MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHz CCBO – 12 – pF DC Current Gain at –VCE = 1 V, –IC = 100 mA Current Gain Group-16 -25 -40 at –VCE = 1 V, –IC = 300 mA Current Gain Group-16 -25 -40 Collector-Emitter Breakdown Voltage at –IC = 10 mA Collector-Emitter Breakdown Voltage at –IC = 0.1 mA 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328