NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA56 Small Signal Transistors (PNP) FEATURES TO-92 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) ♦ PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the NPN transistor MPSA06 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available in the SOT-23 case with the type designation MMBTA56. max. ∅ 0.022 (0.55) 0.098 (2.5) E C MECHANICAL DATA B Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage –VCBO 80 V Collector-Emitter Voltage –VCEO 80 V Emitter-Base Voltage –VEBO 4.0 V –IC 500 mA Ptot 625 mW 1.5 W RθJA 200(1) K/W Junction Temperature Tj 150 °C Storage Temperature Range TS – 55 to +150 °C Collector Current Power Dissipation at TA = 25 °C at TC = 25 °C Thermal Resistance Junction to Ambient Air 1)Valid provided that leads are kept at ambient temperature 10/27/98 MPSA56 ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at -IC = 1 mA, IB = 0 mA -VBR(CEO) 80 – V Emitter-Base Breakdown Voltage at IE = 100 mA, IC = 0 -V(BR)EBO 4.0 – V Collector-Emitter Cutoff Current -VCE = 60 V, -IB = 0 -ICES – 100 nA Collector-Base Cutoff Current -VCB = 80 V, IE = 0 -ICBO – 100 nA Collector Saturation Voltage at -IC = 100 mA, -IB = 10 mA -VCEsat – 0.25 V Base-Emitter On Voltage at -IC = 100 mA, -IB = 10 mA at -IC = 50 mA, -IB = 5 mA -VBE(on) – 1.2 V hFE hFE 100 100 – – – – fT 50 – MHz DC Current Gain at VCE = 1 V, -IC = 10 mA at VCE = 1 V, -IC = 100 mA Gain-Bandwidth Product at VCE = 1 V, IC = 100 mA, f = 100 MHz 1) Valid provided that electrodes are kept at ambient temperature