2N4126 Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (PNP) TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) Features min. 0.492 (12.5) 0.181 (4.6) • PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor 2N4124 is recommended. Mechanical Data max. ∅ 0.022 (0.55) 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk – 5K per container, 20K/box E7/4K per Ammo mag., 20K/box Bottom View Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage –VCEO 25 V Collector-Base Voltage –VCBO 25 V Emitter-Base Voltage –VEBO 4 V –IC 200 mA –ICM 800 mA –IB 50 mA Collector Current Peak Collector Current Base Current Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Ptot RΘJA (1) mW (1) °C/W 625 200 Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Valid provided that leads at a distance of 2 mm from case are kept at ambient temperature. Document Number 88116 07-May-02 www.vishay.com 1 2N4126 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit hFE VCE = –1 V, IC = –2.0 mA VCE = –1 V, IC = –50 mA 120 — — 60 360 — — Collector Cutoff Current –ICBO VCB = –20 V — — 50 nA Emitter Cutoff Current –IEBO VEB = –3 V — — 50 nA Collector Saturation Voltage –VCEsat IC = –50 mA, IB = –5 mA — — 0.4 V Base Saturation Voltage –VBEsat IC = –50 mA, IB = –5 mA — — 0.95 V Collector-Emitter Breakdown Voltage –V(BR)CEO IC = –1 mA 25 — — V Collector-Base Breakdown Voltage –V(BR)CBO IC = –10 µA 25 — — V Emitter-Base Breakdown Voltage –V(BR)EBO IE = –10 µA 4 — — V fT VCE = –5 V, IC = –10 mA f = 50 MHz — 200 — MHz CCBO VCB = –10 V, f = 1MHz — 12 — pF J DC Current Gain Gain-Bandwidth Product Collector-Base Capacitance Ratings and Characteristic Curves (T www.vishay.com 2 A = 25°C unless otherwise noted) Document Number 88116 07-May-02 2N4126 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88116 07-May-02 www.vishay.com 3 2N4126 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88116 07-May-02