BCW61 Series Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 0.031 (0.8) Pin Configuration 1. Base 2. Emitter 3. Collector 0.035 (0.9) .016 (0.4) 0.079 (2.0) .016 (0.4) .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 2 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features • PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended. Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking BCW61A = BA Code: BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box Maximum Ratings & Thermal Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbol Value Unit Collector-Emitter Voltage (VBE = 0) –VCES 32 V Collector-Emitter Voltage –VCEO 32 V Emitter-Base Voltage –VEBO 5.0 V Collector Current (DC) –I C 100 mA Peak Collector Current –ICM 200 mA Base Current (DC) –IB 50 mA Power Dissipation Ptot 250 mW Tj 150 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance, Junction to Ambient Air RθJA 500(1) °C/W Maximum Junction Temperature Note: (1) Mounted on FR-4 printed-ciruit board. Document Number 88171 09-May-02 www.vishay.com 1 BCW61 Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics DC Current Gain at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = at –VCE = 5 V, –IC = 10 10 10 10 at at at at –VCE = –VCE = –VCE = –VCE = 5 V, 5 V, 5 V, 5 V, –IC = –IC = –IC = –IC = 2 2 2 2 at at at at –VCE = –VCE = –VCE = –VCE = 1 V, 1 V, 1 V, 1 V, –IC = –IC = –IC = –IC = 50 50 50 50 Ratings at 25°C ambient temperature unless otherwise specified. Symbol Min. TYP. Max. Unit µA µA µA µA BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE – 30 40 100 – – – – – – – – – – – – mA mA mA mA BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 120 180 250 380 – – – – 220 310 460 630 – – – – BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 60 80 100 110 – – – – – – – – – – – – Collector-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA at –IC = 50 mA, –IB = 1.25 mA –VCEsat –VCEsat 60 120 – – 250 550 mV mV Base-Emitter Saturation Voltage at –IC = 10 mA, –IB = 0.25 mA at –IC = 50 mA, –IB = 1.25 mA –VBEsat –VBEsat 600 680 – – 850 1050 mV mV –VBE –VBE –VBE 600 – – 650 550 720 750 – – mV mV mV Collector-Emiter Cut-off Current at –VCE = 32 V, VEB=0 at –VCE = 32 V, VEB=0, TA = 150°C –ICES – – – – 20 20 nA µA Emitter-Base Cut-off Current at –VEB = 4 V, IC=0 –IEBO – – 20 nA fT 100 – – MHz Collector-Base Capacitance at –VCB = 10 V, f = 1 MHZ, IE=0 CCBO – 4.5 – pF Emitter-Base Capacitance at –VEB = 0.5 V, f = 1 MHZ, IC=0 CEBO – 11 – pF F – 2 6 dB hfe – – – – 200 260 330 520 Turn-on Time at RL = 990Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA ton – 85 150 ns Turn-off Time at RL = 990Ω (see fig. 1) – VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA toff – 480 800 ns mA mA mA mA Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA at –VCE = 5 V, –IC = 10 µA at –VCE = 1 V, –IC = 50 mA Gain-Bandwidth Product at –VCE = 5 V, –IC = 10 mA, f = 100 MHz Noise Figure at –VCE = 5 V, –IC = 200 µA, RS = 2 kΩ, f = 100 kHZ, B = 200Hz Small Signal Current Gain at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ www.vishay.com 2 BCW60A BCW60B BCW60C BCW60D Document Number 88171 09-May-02 BCW61 Series Vishay Semiconductors formerly General Semiconductor Fig. 1 - Switching Waveforms 10% 90% INPUT t on t off 10% OUTPUT 90% 90% 10% td t r Document Number 88171 09-May-02 ts tf www.vishay.com 3