Schottky Barrier Chips for Hybrid Integrated Circuits Technical Data HSMS-0005/06 HSMS-8002/12 Features Description/Applications • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • Uniform Electrical Characteristics • Batch Matched Versions Available • Planar Construction • Available in Many Electrical Selections • Ideal for Hybrid Integrated Circuits These Schottky chips are designed for hybrid applications at DC through K-band frequencies. The passivated planar construction of these Schottky chips provides a wide temperature range capability combined with broad bandwidth performance. A variety of chips are provided which are optimized for various analog and digital applications. Typical applications of Schottky chips are mixing, detecting, switching, gating, sampling, and wave shaping. This series of Schottky diode chips are specifically designed for analog and digital hybrid applications requiring thermosonic or thermocompression bonding techniques. The large bonding pad allows easy bonding. The top metallization is a layer of gold deposited on adhesive metal layers for a tarnish-free surface that allows either thermosonic or thermocompression bonding techniques. The bottom metallization is also gold, suitable for epoxy or eutectic die attach methods. 5965-8855E 3-86 Chip Dimensions X D Y X 2 X 2 Z DIMENSIONS D X Y Z Top Contact PART NO. HSMS-0006/-8002 -0005 75 55 (3) (2) 250 250 (10) (10) 275 250 (11) (10) 150 150 (8) (6) Anode Cathode NOTES: 1. Dimensions in mIcrons (1/1000 inch). 2. Dimension tolerance is ±30µ. 3. All contact metallization is gold. Absolute Maximum Ratings, TA = 25°C Symbol Parameter Units HSMS-8002 HSMS-0005 mW 75 75 PT Total device dissipation, measured in an infinite heatsink. Derate linearly to zero at maximum rated temperature PIV Peak Inverse Voltage V 4.0 2.0 TJ Junction Temperature (maximum) °C 150 200 Storage Temp. Range °C –65 to 150 –65 to 200 TSTG TOP Operating Temperature °C –65 to 150 Note: Operation in excess of any one of these conditions may result in permanent damage to the device. –65 to 200 DC Electrical Specifications at TA = 25°C Schottky Barrier Chips for Microwave and RF Mixers Nearest Batch Equivalent Matched[1] Packaged HSMSPart: HSMS- Part Number HSMS8002 Test Conditions 8012 ∆VF = 15 mV IF = 1 mA 8101 Minimum Breakdown Voltage VBR (V) Maximum Forward Voltage VF (mV) 4 IR = 10 µA 250 Maximum Forward Voltage VF (mV) 350 IF = 1 mA Maximum Capacitance CT (pF) 0.16 VR = 0 V f = 1.0 MHz Maximum Dynamic Resistance RD (Ω)[2] 14 IF = 5 mA Notes: 1. Standard batch match size, 100 units. 2. To obtain R S , subtract 26/5 = 5.2 Ω. RF Electrical Parameters at TA = 25°C Part Number HSMS- Typical Conversion Loss L C (dB) Typical IF Impedance Z IF (Ω) Typical SWR 8002 5.5 150 1.2:1 Test Conditions f = 16 GHz DC load resistance = 0␣ Ω, LO power = 1 mW 3-87 Typical Tangential Sensitivity T SS (dBm) -46 f = 10 GHz BW = 2 MHz IBIAS = 20 µA DC Electrical Specifications at TA = 25°C Schottky Barrier Chips for Microwave and RF Detectors Part Number HSMS- Nearest Equivalent Packaged Part No. HSMS- Maximum Forward Voltage VF (mV) Minimum Breakdown Voltage VBR (V) Typical Capacitance C T (pF) 0005 0006 2850 2860 250 350 — 4.0 0.20 0.17 IF = 1 mA IR = 10 µA VR = 0.5 V, f = 1 MHz Test Conditions Typical RF Electrical Parameters at TA = 25°C Part Number HSMS- DC Bias 0005 0006 zero 5 µA 915 MHz Voltage Sensitivity γ (mV/ µW) 2.45 GHz 5.8 GHz Video Resistance R V (KΩ) 40 40 30 32 22 25 8.0 5.5 Pin = -40 dBm Test Conditions RL = 100 KΩ SPICE Parameters Equivalent Circuit Model Parameter Units HSMS-8002 HSMS-0005 HSMS-0006 BV CJ0 EG IBV IS N RS PB PT M V pF eV A A Ω V 7.0 0.16 0.69 10E-5 4.6 x 10E - 8 1.08 5.0 0.65 2 0.5 3.8 0.16 0.69 10E-5 3 x 10E - 6 1.15 20 0.65 2 0.5 6.0 0.17 0.69 10E-5 3 x 10E - 8 1.10 7.0 0.65 2 0.5 3-88 Rj RS Cjo Rj ≈ .026 Is + I b Ib = bias current in A Assembly and Handling Procedures for Schottky Chips 1. Storage Devices should be stored in a dry nitrogen purged desiccator or equivalent. 2. Cleaning If required, surface contamination may be removed with electronic grade solvents such as freon (T.F. or T.M.C.), acetone, deionized water, and methanol used singularly or in combinations. Typical cleaning times per solvent are one to three minutes. DI water and methanol should be used (in that order) in the final cleansing. Final drying can be accomplished by placing the cleaned dice on clean filter paper and drying with an infrared lamp for 5 –10 minutes. Acids such as hydrofluoric (HF), nitric (HNO3) and hydrochloric (HCl) must not be used. The effects of cleaning methods / solutions should be verified on small samples prior to submitting the entire lot. Following cleaning, dice should either be used in assembly (typically within a few hours) or stored in clean containers in an inert atmosphere or a vacuum chamber. 3-89 3. Die Attach a. Eutectic Eutectic die attach can be accomplished by “scrubbing” the die with a preform on the header. (Note— times and temperature utilized vary depending on the type of preform.) For example, 310°C is suitable for a Au/Sn preform. b. Epoxy For epoxy die-attach, conducive silver-filler epoxies are recommended. This method can be used for all Hewlett-Packard Schottky chips. 4. Wire Bonding Thermocompression wire bonding is recommended. Suggested wire is pure gold, 0.7 to 1.5␣ mil diameter.