Beam Lead Schottky Diodes for Mixers and Detectors (1– 26 GHz) Technical Data HSCH-5300 Series Features • Platinum Tri-Metal System High Temperature Stability • Silicon Nitride Passivation Stable, Reliable Performance • Low Noise Figure Guaranteed 7.5 dB at 26 GHz • High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics • Rugged Construction 4 Grams Minimum Lead Pull • Low Capacitance 0.10 pF Max. at 0 V • Polyimide Scratch Protection Description These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The HP beam lead process allows for large beam anchor pads for rugged construction (typical 6␣ gram pull strength) without degrading capacitance. 5965-8849E Outline 07 CATHODE GOLD LEADS 130 (5) 100 (4) 135 (5) 90 (3) 135 (5) 90 (3) 225 (9) 200 (8) 310 (12) 250 (10) 225 (9) 170 (7) 12 (.5) 8 (.3) 30 MIN (1) SILICON 710 (28) 670 (26) GLASS 60 (2) 40 (1) DIMENSIONS IN µm (1/1000 inch) Maximum Ratings Pulse Power Incident at TA = 25°C ................................................... 1 W Pulse Width = 1 µs, Du = 0.001 CW Power Dissipation at TA = 25°C ........................................... 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR – Operating Temperature Range ........................... -65°C to +175 °C TSTG – Storage Temperature Range ............................... -65°C to +200°C Minimum Lead Strength ................................... 4 grams pull on any lead Diode Mounting Temperature ........................... +350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. 3-64 Applications The beam lead diode is ideally suited for use in stripline or microstrip circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC tested HSCH-5310, -5312, and -5316. A batch matched version is available as the HSCH-5317. Equivalent low barrier devices are HSCH-5330, -5332, and -5336. Batch matched Assembly Techniques versions are available as HSCH-5331 and -5333. Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” For applications requiring guaranteed RF-tested performance up to 26 GHz, the HSCH-5340 is selected with batch match units available as the HSCH-5341. The HSCH-5318 is selected for 6.2 dB maximum noise figure at 9.375␣ GHz; with RF batch match units available as the HSCH-5319. The HSCH-5314 is rated at 7.2 dB maximum noise figure at 16 GHz with RF batch match units available as the HSCH-5315. Table IA. Electrical Specifications for RF Tested Diodes at TA = 25°C Part Number HSCH- Batch* Matched HSCH- Barrier 5318 5319 Medium 5314 5315 5340 5341 Test Conditions ∆NF ≤ 0.3 dB ∆ZIF ≤ 25 Ω Max. Noise Figure NF (dB) 6.2 at 9.375 GHz IF Impedance ZIF (Ω) Min. Max. 200 400 Max. SWR Min. Breakdown Voltage VBR (V) Max. Dynamic Resistance RD (Ω) Max. Total Capacitance CT (pF) Max. Forward Voltage VF (mV) Max. Leakage Current IR (nA) 1.5:1 4 12 0.25 500 100 16 0.15 4 20 0.10 375 400 IR ≤ 10 µA IF = 5 mA VR = 0 V f = 1 MHz IF = 1 mA VR = 1 V 7.2 at 16 GHz Low 7.5 at 26 GHz 150 350 1.5:1 DC Load Resistance - 0 Ω LO Power = 1 mW IF = 30 MHz, 1.5 dB NF *Minimum batch size 20 units. Note: 1. CT = CJ + 0.02 pF (fringing cap). 3-65 Table IB. Electrical Specifications for DC Tested Diodes at TA = 25°C Part Number HSCH- Batch* Matched HSCH- 5316 5312 5310 5317 5336 5332 5330 5333 5331 Test Conditions ∆VF ≤ 15 mV @ 5 mA Barrier Minimum Breakdown Voltage VBR (V) Maximum Dynamic Resistance RD (Ω) Maximum Total Capacitance CT (pF) Maximum Forward Voltage VF (mV) Maximum Leakage Current IR (nA) Medium 4 12 16 20 0.25 0.15 0.10 500 100 Low 4 12 16 20 0.25 0.15 0.10 375 400 IR ≤ 10 µA IF = 5 mA VR = 0 V f = 1 MHz IF = 1 mA VR = 1 V *Minimum batch size 20 units. Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -54 dBm Voltage Sensitivity γ 6.6 mV/µW 20 µA Bias, RL = 100 KΩ Video Bandwidth = 2 MHz f = 10 GHz Video Resistance RV 1400 Ω Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -44 dBm Voltage Sensitivity γ 10 mV/µW Zero Bias, RL = 10 MΩ Video Bandwidth = 2 MHz f = 10 GHz Video Resistance RV 1.8 MΩ Low Barrier (Zero Bias) SPICE Parameters HSCH-5316 HSCH-5312 HSCH-5330 Parameter Units HSCH-5318 HSCH-5314 HSCH-5310 HSCH-5340 HSCH-5332 HSCH-5336 BV CJ0 EG IBV IS N RS PB PT M V pF eV A A Ω V 5 0.2 0.69 10E-5 3 x 10E - 10 1.08 5 0.65 2 0.5 5 0.13 0.69 10E-5 3 x 10E - 10 1.08 9 0.65 2 0.5 5 0.09 0.69 10E-5 3 x 10E - 10 1.08 13 0.65 2 0.5 3-66 5 0.09 0.69 10E-5 4 x 10E - 10 1.08 13 0.5 2 0.5 5 0.13 0.69 10E-5 4 x 10E - 8 1.08 9 0.5 2 0.5 5 0.20 0.69 10E-5 4 x 10E-8 1.08 6 0.5 2 0.5 Typical Parameters 100 10 1 0.1 1 0.1 0.01 1.0 0.25 pF 5.5 5.0 0 0.2 0.4 0.6 0.8 0 FORWARD VOLTAGE (V) 0 3. 0.2 0 5. 1.0 0.5 0.2 10.0 2 5. .0 10 10 10 .0 5.0 3.0 2.0 1.0 28 0 150 µA 26 GHz 20 10 .0 0.2 0 5. 0.2 0 5. 0 0 3. 1.0 1.0 2.0 0. 2.0 5 3. 5 26 2.0 2.0 20 µA 50 µA 10 0. 24 1.0 1.0 5 26 GHz 2 0.5 16 20 8 12 9.375 FREQUENCY (GHz) 0. 5 0. 18 10 0.2 4 Figure 3. Typical Noise Figure vs. Frequency. Figure 2. Typical Forward Characteristics for Low Barrier Beam Lead Diodes. HSCH-5330, -5340 Series. Figure 1. Typical Forward Characteristics for Medium Barrier Beam Lead Diodes. HSCH-5310 Series. 0.2 2 FORWARD VOLTAGE (V) 0 0.8 6.0 3. 0.6 0.15 pF 10.0 .0 0.4 6.5 5.0 0.2 0.1 pF 3.0 0 7.0 10 2.0 0.01 7.5 +125°C +25°C -55°C NOISE FIGURE (dB) +125°C +25°C -55°C FORWARD CURRENT (mA) FORWARD CURRENT (mA) 100 Figure 4. Typical Admittance Characteristics with 1 mA Self Bias. HSCH-5340 and -5341. Figure 5. Typical Admittance Characteristics with External Bias. HSCH-5340 and -5341. 3-67 0.2 3. 0 3. 0 2.0 10 0.2 0 5. 10 2.0 1.0 1.0 20 µA 50 µA 150 µA 18 GHz 5 0. 5 0. 1 mA 1.5 mA 3 mA 18 GHz 0 5. .0 .0 10.0 .0 10 5.0 3.0 2.0 0.5 0.2 5.0 3.0 2.0 1.0 0.5 0.2 10.0 .0 10 0.2 0 0.2 2 5. 2 1.0 10 10 0 5. 0 0 3. 2.0 0. 1.0 1.0 0. 2.0 5 5 3. Figure 7. Typical Admittance Characteristics with External Bias. HSCH-5314 and -5315. 0 5. .0 10 .0 10 10.0 .0 0.2 0 5. 0.2 10 5.0 3.0 2.0 1.0 10 0.5 0.2 2 10.0 .0 5.0 3.0 2.0 1.0 2 0.5 0 3. 0 3. 6 0.2 0 5. 0.2 2.0 2.0 5 12 GHz 1 mA 1.5 mA 3 mA 0. 5 0. 0.2 1.0 20 µA 50 µA 150 µA 12 GHz 1.0 Figure 6. Typical Admittance Characteristics with Self Bias. HSCH-5314 and -5315. 0 5. 0 0 3. 1.0 Figure 9. Typical Admittance Characteristics with External Bias. HSCH-5318 and -5319. Models for Each Beam Lead Schottky Diode HSCH-5340, -5341 1 mA Self Bias 0.03 pF 0.1 nH 0.04 nH 11 Ω 2.0 5 0. 1.0 0. 2.0 5 3. Figure 8. Typical Admittance Characteristics with Self Bias. HSCH-5318 and -5319. 267 Ω 0.11 pF 3-68 Other HSCH-53XX Self Bias 0.02 pF 0.1 nH Rj Rs Cj 1.0 mA Self Bias 1.5 mA Self Bias 3.0 mA Self Bias RS (Ω) Rj (Ω) Cj (pF) RS (Ω) Rj (Ω) Cj (pF) RS (Ω) Rj (Ω) Cj (pF) HSCH-5314, -5315 5.0 393 0.11 5.2 232 0.11 5.0 150 0.12 HSCH-5318, -5319 5.1 244 0.16 5.0 178 0.16 5.0 109 0.19 Part Numbers HSCH-5340, -5341 External Bias 0.03 pF 0.1 nH Rj 0.04 nH 11 Ω Cj 20 µA DC Bias 50 µA DC Bias 150 µA DC Bias Part Numbers Rj (Ω) Cj (pF) Rj (Ω) Cj (pF) Rj (Ω) Cj (pF) HSCH-5340, -5341 1300 0.09 560 0.09 187 0.10 Other HSCH-53XX External Bias 0.02 pF 0.1 nH Rs Rj Cj 20 µADC Bias Part Numbers RS (Ω) 50 µADC Bias Rj (Ω) Cj (pF) 150 µADC Bias RS (Ω) Rj (Ω) Cj (pF) RS (Ω) Rj (Ω) Cj (pF) HSCH-5314, -5315 2.8 1300 0.11 4.7 520 0.12 2.7 180 0.13 HSCH-5318, -5319 5.1 1300 0.18 3.9 520 0.19 4.7 180 0.20 3-69