GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation • Multiple Configurations 125 (4.9) 115 (4.5) 183 (7.2) 178 (7.0) 9 (0.4) 7 (0.3) 60 (2.4) 50 (2.0) L = 0.1 nH Description The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy (MBE) manufacturing techniques and feature rugged construction and consistent electrical performance. A polyimide coating provides scratch protection and resistance to contamination. 270 (10.6) 190 (7.5) 636 (25.0) 626 (24.6) 280 (11.0) 200 (7.8) HSCH-9201 115 (4.5) 105 (4.1) 280 (11.0) 200 (7.8) 183 (7.2) 178 (7.0) 346 (13.6) 266 (10.5) 712 (28.0) 702 (27.6) 9 (0.4) 7 (0.3) 60 (2.4) 50 (2.0) L = 0.1 nH HSCH-9251 125 (4.9) 115 (4.5) Junction Side Up 290±50 (11.0) 200 (7.8) 183 (7.2) 178 (7.0) 280±50 (10.6) 190 (7.5) 712 (28.0) 702 (27.6) 9 (0.4) 7 (0.3) 60 (2.4) 50 (2.0) L = 0.1 nH 5965-8851E 3-76 DIMENSIONS IN µm (1/1000 inch) Applications This line of Schottky diodes is optimized for use in mixer applications at millimeter wave frequencies. Some suggested mixer types are single ended and single balanced for the single and series pair. The anti-parallel pair is ideal for harmonic mixers. Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 992, “Beam Lead Attachment Methods,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” GaAs diodes are ESD sensitive. Proper precautions should be used when handling these devices. Assembly Techniques Maximum Ratings Power Dissipation at TLEAD = 25°C ........................... 75 mW per junction Measured in an infinite heat sink derated linearly to zero at maximum rated temperature Operating Temperature ................................................. -65°C to +150°C Storage Temperature .................................................... -65°C to +150°C Mounting Temperature ......................................... 235°C for 10 seconds Minimum Lead Strength ............................................................. 6 grams Electrical Specifications at TA = 25°C Part Number Symbol Parameters and Test Conditions HSCH-9101 Units Min. HSCH-9201 Typ. Max. 0.040 0.050 Min. HSCH-9251 Typ. Max. 0.040 0.050 0.005 0.010 Min. Typ. Max. Cj[1] Junction Capacitance VR = 0 V, f = 1 MHz pF ∆Cj[1] Junction Capacitance Difference VR = 0 V, f = 1 MHz pF RS[2] Series Resistance Ω VF1 Forward Voltage IF = 1 mA mV 700 800 700 800 700 800 VF10 Forward Voltage IF = 10 mA mV 800 850 800 850 800 850 ∆VF Forward Voltage Difference IF = 1 mA and 10 mA mV VBR Reverse Breakdown Voltage VR = VBR measure IR ≤ 10 µA (per junction) V 6 6 15 4.5 0.040 6 15 4.5 Notes: 1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF). 2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 Ω. 3-77 Typical Parameters IF IMPEDANCE (Ω) +125°C +25°C -55°C 10 1 NOISE FIGURE (dB) FORWARD CURRENT (mA) 100 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE (V) Figure 1. Typical Forward Characteristics for HSCH-9101, HSCH-9201, and HSCH-9251. 300 Z IF 200 100 8 NF 7 6 0 2 4 6 Parameter Units HSCH-9XXX V pF eV A A Ω V 10 12 14 Figure 2. Typical Noise Figure and I.F. Impedance vs. Local Oscillator Power, for HSCH-9101 and HSCH-9201. SPICE Parameters BV CJ0 EG IBV IS N RS PB PT M 8 LOCAL OSCILLATOR POWER (dBm) 5 0.04 1.43 10E-5 1.6 x 10E - 13 1.20 5 0.7 2 0.5 3-78