Data Sheet No. PD60161-M IR2108(4) (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Cross-conduction prevention logic Matched propagation delay for both channels High side output in phase with HIN input Low side output out of phase with LIN input Logic and power ground +/- 5V offset. Internal 540ns dead-time, and programmable up to 5us with one external RDT resistor (IR21084) Lower di/dt gate driver for better noise immunity Description Product Summary VOFFSET 600V max. IO+/- 120 mA / 250 mA VOUT 10 - 20V ton/off (typ.) 220 & 200 ns Deadtime (typ.) 540 ns (programmable up to 5uS for IR21084) Packages The IR2108(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. 8-Lead SOIC IR2108S 14-Lead SOIC IR21084S 14-Lead PDIP IR21084 8-Lead PDIP IR2108 Typical Connection up to 600V VCC VCC VB HIN HIN HO LIN LIN VS COM LO TO LOAD up to 600V HO IR2108 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com VCC VCC VB HIN HIN VS LIN LIN IR21084 TO LOAD DT V SS RDT VSS COM LO 1 IR2108(4) (S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Min. Max. -0.3 625 High side floating supply offset voltage VB - 25 VB + 0.3 VHO High side floating output voltage VS - 0.3 VB + 0.3 VCC Low side and logic fixed supply voltage -0.3 25 VLO Low side output voltage -0.3 VCC + 0.3 VB High side floating absolute voltage VS Units DT Programmable dead-time pin voltage (IR21084 only) VSS - 0.3 VCC + 0.3 VIN Logic input voltage (HIN & LIN ) VSS - 0.3 VCC + 0.3 VSS Logic ground (IR21084 only) VCC - 25 VCC + 0.3 dVS/dt PD RthJA Allowable offset supply voltage transient Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient — 50 — 1.0 (8 lead SOIC) — 0.625 (14 lead PDIP) — 1.6 (8 lead PDIP) (14 lead SOIC) — 1.0 (8 lead PDIP) — 125 (8 lead SOIC) — 200 (14 lead PDIP) — 75 (14 lead SOIC) — 120 TJ Junction temperature — 150 TS Storage temperature -50 150 TL Lead temperature (soldering, 10 seconds) — 300 V V/ns W °C/W °C Recommended Operating Conditions The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential. Symbol Definition VB High side floating supply absolute voltage VS High side floating supply offset voltage Min. Max. VS + 10 VS + 20 Note 1 600 VB VHO High side floating output voltage VS VCC Low side and logic fixed supply voltage 10 20 VLO Low side output voltage 0 VCC VIN Logic input voltage (HIN & LIN ) VSS VCC DT Programmable dead-time pin voltage (IR21084 only) VSS VCC VSS Logic ground (IR21084 only) -5 5 Ambient temperature -40 125 TA Units V °C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -V BS. (Please refer to the Design Tip DT97-3 for more details). 2 www.irf.com IR2108(4) (S) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions ton Turn-on propagation delay — 220 300 toff Turn-off propagation delay — 200 280 MT Delay matching | ton - toff — 0 30 | tr Turn-on rise time — 150 220 tf Turn-off fall time — 50 80 Deadtime: LO turn-off to HO turn-on(DTLO-HO) & HO turn-off to LO turn-on (DTHO-LO) 400 4 540 5 680 6 Deadtime matching = | DTLO-HO - DTHO-LO | — 0 60 — 0 600 DT MDT VS = 0V VS = 0V or 600V nsec VS = 0V VS = 0V usec nsec RDT= 0 RDT = 200k (IR21084) RDT=0 RDT = 200k (IR21084) Static Electrical Characteristics VBIAS (VCC, VBS ) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and IIN parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO. Symbol Definition Min. Typ. Max. Units Test Conditions VIH Logic “1” input voltage for HIN & logic “0” for LIN 2.9 — — VCC = 10V to 20V VIL Logic “0” input voltage for HIN & logic “1” for LIN — — 0.8 VCC = 10V to 20V VOH High level output voltage, VBIAS - VO — 0.8 1.4 VOL Low level output voltage, VO — 0.3 0.6 ILK Offset supply leakage current — — 50 IQBS Quiescent VBS supply current 20 60 150 IQCC Quiescent VCC supply current 0.4 1.0 1.6 IIN+ Logic “1” input bias current — 5 20 IIN- Logic “0” input bias current — 1 2 VCCUV+ VCC and VBS supply undervoltage positive going 8.0 8.9 9.8 VBSUV+ threshold VCCUV- VCC and VBS supply undervoltage negative going 7.4 8.2 9.0 VBSUV- threshold VCCUVH Hysteresis 0.3 0.7 — IO+ Output high short circuit pulsed current 120 200 — IO- Output low short circuit pulsed current 250 350 — V IO = 20 mA IO = 20 mA VB = VS = 600V µA mA VIN = 0V or 5V VIN = 0V or 5V RDT=0 HIN = 5V, LIN = 0V µA HIN = 0V, LIN = 5V V VBSUVH www.irf.com mA VO = 0V, PW ≤ 10 µs VO = 15V, PW ≤ 10 µs 3 IR2108(4) (S) Functional Block Diagram VB UV DETECT 2108 HO R HV LEVEL SHIFTER VSS/COM LEVEL SHIFT HIN DT R PULSE FILTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION UV DETECT +5V VSS/COM LEVEL SHIFT LIN LO DELAY COM VSS VB 21084 UV DETECT HO R VSS/COM LEVEL SHIFT HIN HV LEVEL SHIFTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION DT UV DETECT +5V LIN R PULSE FILTER VSS/COM LEVEL SHIFT DELAY LO COM VSS 4 www.irf.com IR2108(4) (S) Lead Definitions Symbol Description HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and VSS for IR21084) LIN Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108 DT Programmable dead-time lead, referenced to VSS. (IR21084 only) VSS Logic Ground (21084 only) VB High side floating supply HO High side gate driver output VS High side floating supply return VCC Low side and logic fixed supply LO Low side gate driver output COM Low side return and VSS for IR21084) Lead Assignments 8 HIN HO 7 3 LIN VS 6 4 COM LO 5 8 1 HIN 7 2 3 LIN VS 6 4 COM LO 5 2 1 2 www.irf.com VB VB HO VCC 1 VCC 8 Lead PDIP 8 Lead SOIC IR2108 IR2108S VCC HIN VB 14 14 1 VCC 13 2 HIN VB 13 12 11 3 LIN HO 12 3 LIN HO 4 DT VS 11 4 DT VS 5 VSS 10 5 VSS 10 6 COM 9 6 COM 9 7 LO 8 7 LO 8 14 Lead PDIP 14 Lead SOIC IR21084 IR21084S 5 IR2108(4) (S) Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A F OOT PRINT 6 8 7 6 5 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] MIN .0532 .0688 1.35 1.75 A1 .0040 3X 1.27 [.050] 8X 1.78 [.070] e1 MAX .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X e MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X L C A B NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 8-Lead SOIC 6 8X c 7 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A SUBST RATE. 01-6027 01-0021 11 (MS-012AA) www.irf.com IR2108(4) (S) 14-Lead PDIP 14-Lead SOIC (narrow body) www.irf.com 01-6010 01-3002 03 (MS-001AC) 01-6019 01-3063 00 (MS-012AB) 7 IR2108(4) (S) LIN HIN 50% 50% LIN ton toff tr 90% tf 90% HO 10% LO LO 10% Figure 1. Input/Output Timing Diagram 50% 50% HIN ton toff tr 90% HIN LIN 50% 50% HO LO DT LO-HO 90% 10% Figure 2. Switching Time Waveform Definitions 90% HO 10% tf 10% DT HO-LO 90% 10% MDT= DT LO-HO - DT HO-LO Figure 3. Deadtime Waveform Definitions IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 5/29/12001 8 www.irf.com