NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB1706DMW5T1, two BRT devices are housed in the SC-88A package which is ideal for low power surface mount applications where board space is at a premium. • • • • (5) (4) Q1 Q2 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel MAXIMUM RATINGS (1) (2) (3) (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) mW Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) mW/°C RθJA 670 (Note 1.) 490 (Note 2.) °C/W Symbol Max Unit PD 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) mW Total Device Dissipation TA = 25°C Derate above 25°C MARKING DIAGRAM U6 mW/°C U6 Thermal Resistance Junction-to-Ambient RθJA 493 (Note 1.) 325 (Note 2.) °C/W Thermal Resistance Junction-to-Lead RθJL 188 (Note 1.) 208 (Note 2.) °C/W TJ, Tstg - 55 to +150 °C Junction and Storage Temperature SC-88A CASE 419A = Device Marking 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 0 1 Publication Order Number: NSB1706DMW5T1/D NSB1706DMW5T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO - - 0.18 mAdc Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 80 200 - VCE(sat) - - 0.25 - - 0.2 4.9 - - Vdc 3.3 4.7 6.1 kΩ 0.055 0.1 0.185 Characteristic OFF CHARACTERISTICS MUN5233DW1T1 ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5233DW1T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) MUN5233DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5233DW1T1 Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5233DW1T1 Input Resistor MUN5233DW1T1 VOL VOH R1 Resistor Ratio MUN5233DW1T1 R1/R2 1. New resistor combinations. Updated curves to follow in subsequent data sheets. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Vdc PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 - 50 RθJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 Vdc 150 NSB1706DMW5T1 PACKAGE DIMENSIONS SC-88A CASE 419A-02 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. A G 5 DIM A B C D G H J K N S 4 -B- S 1 2 3 D 5 PL 0.2 (0.008) M B M N J C H K http://onsemi.com 3 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NSB1706DMW5T1 Thermal Clad is a trademark of the Bergquist Company. 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