Transistor 2SB0767 (2SB767) Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm ■ Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A 1 W 150 ˚C –55 ~ +150 ˚C Junction temperature Tj Storage temperature Tstg 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter +0.25 4.0–0.20 0.4±0.04 3.0±0.15 Symbol PC 0.4max. 0.5±0.08 1.5±0.1 Parameter Collector power dissipation 0.4±0.08 (Ta=25˚C) * 45° +0.1 ● 2.6±0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ● 1.0–0.2 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : C or more, and the board (Ta=25˚C) Symbol Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –20V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –100µA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Forward current transfer ratio hFE1 *1 VCE = –10V, IC = –150mA*2 90 330 hFE2 VCE = –5V, IC = –500mA*2 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 – 0.2 –0.4 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 50 100 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 Marking Symbol CQ CR CS Note.) The Part number in the Parenthesis shows conventional part number. 1 2SB0767 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 Ta=25˚C IB=–10mA –1.0 1.0 0.8 –6mA –5mA – 0.6 0.6 –4mA –3mA – 0.4 0.4 –2mA – 0.2 0.2 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 25˚C Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –10 –30 Ta=75˚C 200 25˚C 150 –25˚C 100 50 – 0.001 –1 –3 –10 –100 –300 –1000 –10 –30 –100 –300 –1000 Single pulse Ta=25˚C –3 Collector current IC (A) 35 –1 ICP IC t=10ms – 0.3 30 25 t=1s – 0.1 20 – 0.03 15 – 0.01 10 – 0.003 5 –30 –100 Collector to base voltage VCB (V) VCB=–10V Ta=25˚C 160 140 120 100 80 60 40 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 1 3 10 30 Emitter current IE (mA) Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C –100 –300 –1000 0 –3 Collector current IC (mA) 40 –30 Collector current IC (mA) 20 –10 –10 – 0.003 fT — I E 250 Cob — VCB –3 – 0.01 200 0 –1 50 0 –1 –25˚C – 0.03 180 Collector current IC (mA) 45 Ta=75˚C 25˚C VCE=–10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 –3 –10 –1 – 0.1 300 IC/IB=10 –30 – 0.01 –1 –8 –3 hFE — IC –100 –1 –6 IC/IB=10 Collector to emitter voltage VCE (V) VBE(sat) — IC –3 –4 –10 – 0.3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) –9mA –8mA –7mA – 0.8 0 2 VCE(sat) — IC Collector current IC (A) Collector power dissipation PC (W) IC — VCE –1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –100 Collector to emitter voltage VCE (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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